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1. (WO2018042754) PLASMA ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD

Pub. No.:    WO/2018/042754    International Application No.:    PCT/JP2017/016187
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Apr 25 01:59:59 CEST 2017
IPC: C23C 16/44
C23C 16/455
H01L 21/31
H01L 21/316
H01L 51/50
H05B 33/04
H05B 33/10
H05H 1/46
Applicants: THE JAPAN STEEL WORKS, LTD.
株式会社日本製鋼所
Inventors: WASHIO, Keisuke
鷲尾 圭亮
MATSUMOTO, Tatsuya
松本 竜弥
Title: PLASMA ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD
Abstract:
Provided is a plasma atomic layer growth device whereby film properties of a film formed on a substrate can be enhanced. The atomic layer growth device according to the present invention forms a film in atomic layer units on a substrate 1S by generating a plasma discharge between a lower electrode BE for retaining the substrate 1S and an upper electrode UE disposed facing the lower electrode BE, the plasma atomic layer growth device being provided with an adhesion prevention member CTM comprising an insulating body for surrounding the upper electrode UE at a distance from the upper electrode UE in plan view.