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1. (WO2018042705) III NITRIDE MICROCRYSTAL AGGREGATE PRODUCTION METHOD, GALLIUM NITRIDE MICROCRYSTAL AGGREGATE PRODUCTION METHOD, III NITRIDE MICROCRYSTAL AGGREGATE, AND SPUTTERING TARGET

Pub. No.:    WO/2018/042705    International Application No.:    PCT/JP2017/006003
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Sat Feb 18 00:59:59 CET 2017
IPC: C30B 29/38
C23C 14/34
C30B 9/10
C30B 9/12
H01L 21/203
H01L 21/208
Applicants: TOKYO ELECTRON LIMITED
東京エレクトロン株式会社
OSAKA UNIVERSITY
国立大学法人大阪大学
Inventors: TAKAHASHI, Nobuaki
高橋 伸明
NEISHI, Koji
根石 浩司
MIURA, Hitoshi
三浦 仁嗣
MORI, Yusuke
森 勇介
IMADE, Mamoru
今出 完
YOSHIMURA, Masashi
吉村 政志
Title: III NITRIDE MICROCRYSTAL AGGREGATE PRODUCTION METHOD, GALLIUM NITRIDE MICROCRYSTAL AGGREGATE PRODUCTION METHOD, III NITRIDE MICROCRYSTAL AGGREGATE, AND SPUTTERING TARGET
Abstract:
The purpose of the present invention is to provide: a III nitride microcrystal aggregate production method, whereby it becomes possible to produce a III nitride microcrystal aggregate that has a low oxygen impurity concentration and is reduced in the number of voids even when voids are not filled with metal gallium; and others. A first aspect of the III nitride microcrystal aggregate production method involves a III nitride microcrystal production step of reacting a Group-III element metal and/or a Group-III element compound with a nitrogen-containing gas in a metal melt containing at least the Group-III element metal and/or the Group-III element compound and an alkali metal and containing no seed crystal substrate to produce a III nitride microcrystal, wherein, in the III nitride microcrystal production step, the III nitride microcrystal is precipitated in such a state that the concentration of nitrogen, which comes from the nitrogen-containing gas dissolved in the metal melt, in a metal solution is a supersaturated one.