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1. (WO2018042632) MOSFET AND POWER CONVERTING CIRCUIT

Pub. No.:    WO/2018/042632    International Application No.:    PCT/JP2016/075870
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Sat Sep 03 01:59:59 CEST 2016
IPC: H01L 21/336
H01L 29/78
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
新電元工業株式会社
Inventors: ARAI, Daisuke
新井 大輔
HISADA, Shigeru
久田 茂
KITADA, Mizue
北田 瑞枝
ASADA, Takeshi
浅田 毅
Title: MOSFET AND POWER CONVERTING CIRCUIT
Abstract:
A MOSFET 100 of the present invention is used in a power converting circuit provided with a reactor, a power supply, a MOSFET, and a rectifying element. The MOSFET 100 is characterized by being provided with a semiconductor substrate having super junction structures in an n-type column region and p-type column region, wherein the n-type column region and p-type column region are formed such that the total impurity amount of the n-type column region is higher than that of the p-type column region; and when the MOSFET is turned off, a first period in which a drain current decreases, a second period in which the drain current increases, and a third period in which the drain current decreases again, appear in this order from a time when the drain current begins to decrease to a time when the drain current firstly becomes 0. According to the MOSFET of the present invention, when the MOSFET is turned off, a surge voltage can be made smaller than that of the conventional MOSFET and thus, the MOSFET can be applied to various power converting circuits.