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1. (WO2018042541) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/042541    International Application No.:    PCT/JP2016/075465
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Thu Sep 01 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 21/28
H01L 21/316
H01L 21/336
H01L 29/12
Applicants: OSAKA UNIVERSITY
国立大学法人大阪大学
Inventors: WATANABE Heiji
渡部 平司
YAMADA Takahiro
山田 高寛
NOZAKI Mikito
野▲崎▼ 幹人
HOSOI Takuji
細井 卓治
SHIMURA Takayoshi
志村 考功
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device (100) is provided with a ground layer (10), an interface layer (20), and a sedimentary layer (30). The ground layer (10) contains a nitride semiconductor having gallium. The interface layer (20) is adjacent to the ground layer (10). The interface layer (20) contains gallium oxide. The sedimentary layer (30) is adjacent to the interface layer (20). The sedimentary layer (30) has a larger bandgap than the interface layer (20). It is preferable that the interface layer (20) have crystallinity. The interface layer (20) preferably has α phase Ga2O3.