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1. (WO2018042534) SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTION DEVICE, OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, THERMOELECTRIC TRANSDUCER, METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING INFRARED DETECTION DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2018/042534 International Application No.: PCT/JP2016/075431
Publication Date: 08.03.2018 International Filing Date: 31.08.2016
IPC:
H01L 21/20 (2006.01) ,G01J 1/02 (2006.01) ,H01L 21/203 (2006.01) ,H01L 21/336 (2006.01) ,H01L 27/144 (2006.01) ,H01L 27/146 (2006.01) ,H01L 29/205 (2006.01) ,H01L 29/78 (2006.01) ,H01L 31/10 (2006.01) ,H01L 33/00 (2010.01) ,H01L 35/26 (2006.01) ,H01S 5/343 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
20
including, apart from doping materials or other impurities, only AIIIBV compounds
201
including two or more compounds
205
in different semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
26
using compositions changing continuously or discontinuously inside the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
343
in AIIIBV compounds, e.g. AlGaAs-laser
Applicants:
富士通株式会社 FUJITSU LIMITED [JP/JP]; 神奈川県川崎市中原区上小田中4丁目1番1号 1-1, Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-shi, Kanagawa 2118588, JP
Inventors:
奥村 滋一 OKUMURA, Shigekazu; JP
苫米地 秀一 TOMABECHI, Shuichi; JP
鈴木 僚 SUZUKI, Ryo; JP
Agent:
伊東 忠重 ITOH, Tadashige; JP
伊東 忠彦 ITOH, Tadahiko; JP
Priority Data:
Title (EN) SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTION DEVICE, OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, THERMOELECTRIC TRANSDUCER, METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING INFRARED DETECTION DEVICE
(FR) SUBSTRAT DE CRISTAL SEMI-CONDUCTEUR, DISPOSITIF DE DÉTECTION INFRAROUGE, DISPOSITIF SEMI-CONDUCTEUR OPTIQUE, DISPOSITIF SEMI-CONDUCTEUR, TRANSDUCTEUR THERMOÉLECTRIQUE, PROCÉDÉ DE PRODUCTION DE SUBSTRAT DE CRISTAL SEMI-CONDUCTEUR, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF DE DÉTECTION INFRAROUGE
(JA) 半導体結晶基板、赤外線検出装置、光半導体装置、半導体装置、熱電変換素子、半導体結晶基板の製造方法及び赤外線検出装置の製造方法
Abstract:
(EN) [Problem] To provide a semiconductor crystal substrate in which a GaSb layer having high surface flatness is formed. [Solution] The problem is solved by providing a semiconductor crystal substrate characterized by including: a crystal substrate formed from a material comprising GaSb or InAs; a first buffer layer which has n-conductivity and is formed on the crystal substrate from a material comprising GaSb; and a second buffer layer which has p-conductivity and is formed on the first buffer layer from a material comprising GaSb.
(FR) [Problème] fournir un substrat de cristal semi-conducteur dans lequel une couche de GaSb ayant une planéité de surface élevée est formée. [Solution] L'invention concerne un substrat de cristal semi-conducteur caractérisé en ce qu'il comprend : un substrat cristallin formé à partir d'un matériau comprenant du GaSb ou du InAs; une première couche tampon qui a une conductivité n et est formée sur le substrat cristallin à partir d'un matériau comprenant du GaSb; et une seconde couche tampon qui a une conductivité p et est formée sur la première couche tampon à partir d'un matériau comprenant du GaSb.
(JA) 【課題】表面の平坦性の高いGaSb層が形成された半導体結晶基板を提供する。 【解決手段】GaSbまたはInAsを含む材料により形成された結晶基板と、前記結晶基板の上に、GaSbを含む材料により形成されたn型導電性の第1のバッファ層と、前記第1のバッファ層の上に、GaSbを含む材料により形成されたp型導電性の第2のバッファ層と、を有することを特徴とする半導体結晶基板により上記課題を解決する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)