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1. (WO2018042284) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/042284    International Application No.:    PCT/IB2017/055049
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Wed Aug 23 01:59:59 CEST 2017
IPC: H01L 21/02
B23K 26/57
B32B 9/00
B32B 15/04
B32B 38/18
G09F 9/00
H01L 21/336
H01L 27/12
H01L 29/786
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventors: YAMAZAKI, Shunpei
SATO, Masataka
IKEZAWA, Naoki
YANAKA, Junpei
IDOJIRI, Satoru
Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.