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1. (WO2018041778) OPTOELECTRONIC COMPONENT
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Pub. No.: WO/2018/041778 International Application No.: PCT/EP2017/071550
Publication Date: 08.03.2018 International Filing Date: 28.08.2017
IPC:
H01L 33/00 (2010.01) ,H01L 33/06 (2010.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
BERGBAUER, Werner; DE
HERTKORN, Joachim; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2016 116 425.902.09.2016DE
Title (EN) OPTOELECTRONIC COMPONENT
(FR) COMPOSANT OPTOÉLECTRONIQUE
(DE) OPTOELEKTRONISCHES BAUELEMENT
Abstract:
(EN) The invention provides an optoelectronic component (10), comprising an active layer, which has a multiple quantum well structure (5), wherein the multiple quantum well structure (5) includes quantum well layers (51), which comprise Alx1Iny1Ga1-x1-y1N with 0 ≤ x1 < 0.03, 0 ≤ y1 ≤ 0.1 und x1 + y1 ≤ 1, and includes barrier layers (52), which comprise Alx2Iny2Ga1-x2-y2N with 0 ≤ x2 ≤ 1, 0 ≤ y2 ≤ 0.02 und x2 + y2 ≤ 1, wherein the barrier layers (52) have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers (52) is x2, max ≥ 0.05, and a minimum value of the aluminium content in the barrier layers (52) is x2, min < 0.05.
(FR) L'invention concerne un composant optoélectronique (10) comprenant une couche active qui présente une structure à multipuits quantiques (5), cette structure à multipuits quantiques (5) contenant des couches de puits quantiques (51) qui présentent le système de matériaux Alx1Iny1Ga1-x1-y1N, étant entendu que 0 ≤ x1 < 0,03, 0 ≤ y1 ≤ 0,1 et x1 + y1 ≤ 1, et des couches barrières (52) qui présentent le système de matériaux Alx2Iny2Ga1-x2-y2N, étant entendu que 0 ≤ x2 ≤ 1, 0 ≤ y2 ≤ 0,02 et x2 + y2 ≤ 1. Les couches barrières (52) présentent une teneur en aluminium variant dans l'espace x2, une valeur maximale de la teneur en aluminium dans les couches barrières (52) x2,max est ≥ 0,05 et une valeur minimale de la teneur en aluminium dans les couches barrières (52) x2,min est < 0,05.
(DE) Es wird ein optoelektronisches Bauelement (10) angegeben, mit einer aktiven Schicht, die eine Mehrfach-Quantentopfstruktur (5) aufweist, wobei die Mehrfach-Quantentopfstruktur (5) Quantentopfschichten (51) enthält, die Alx1Iny1Ga1-x1-y1N mit 0 ≤ x1 < 0,03, 0 ≤ y1 ≤ 0,1 und x1 + y1 ≤ 1 aufweisen, und Barriereschichten (52) enthält, die Alx2Iny2Ga1-x2-y2N mit 0 ≤ x2 ≤ 1, 0 ≤ y2 ≤ 0,02 und x2 + y2 ≤ 1 aufweisen, wobei die Barriereschichten (52) einen räumlich variierenden Aluminiumgehalt x2 aufweisen, ein Maximalwert des Aluminiumgehalts in den Barriereschichten (52) x2, max ≥ 0,05 beträgt, und ein Minimalwert des Aluminiumgehalts in den Barriereschichten (52) x2,min < 0,05 beträgt.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)