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1. (WO2018041641) METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
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Pub. No.: WO/2018/041641 International Application No.: PCT/EP2017/070853
Publication Date: 08.03.2018 International Filing Date: 17.08.2017
IPC:
H01L 33/44 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/54 (2010.01) ,H01L 33/00 (2010.01) ,H01L 33/38 (2010.01) ,H01L 33/50 (2010.01) ,H01L 33/46 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
38
with a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
PERZLMAIER, Korbinian; DE
RAFAEL, Christine; DE
KASPRZAK-ZABLOCKA, Anna; DE
LEIRER, Christian; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2016 116 460.702.09.2016DE
Title (EN) METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
(FR) PROCÉDÉ POUR PRODUIRE UN DISPOSITIF À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE ET DISPOSITIF À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE
(DE) VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUTEILS UND OPTOELEKTRONISCHES HALBLEITERBAUTEIL
Abstract:
(EN) The invention relates to a method for producing an optoelectronic semiconductor component, wherein in a method step A), a growth substrate (2) having a semiconductor layer sequence (10) arranged thereon, which is suited for the emission of light, is provided. The semiconductor layer sequence (10) comprises at least one separating trench (3) extending at least partially through the semiconductor layer sequence (10) from a side (10a) of the semiconductor layer sequence (10) that faces away from the growth substrate (2) in the direction of the growth substrate (2). In a method step B), an arranging of a lacquer structure (4) in the separating trench (3) takes place. In a method step C), the arrangement of a potting (6) on the side (10a) of the semiconductor layer sequence (10) that faces away from the growth substrate (2) takes place such that the potting (6) is in lateral contact with at least a part of the lacquer structure (4).
(FR) L'invention concerne un procédé pour produire un dispositif à semi-conducteur optoélectronique, consistant, au cours d'une étape de procédé A) à fournir un substrat de croissance (2) sur lequel est disposée une séquence de couches semi-conductrices (10) conçue pour émettre de la lumière, cette séquence de couches semi-conductrices (10) comportant au moins une tranchée de séparation (3) qui s'étend au moins partiellement à travers la séquence de couches semi-conductrices (10), d'un côté (10a) de la séquence de couches semi-conductrices (10) qui est opposé au substrat de croissance (2), en direction de ce substrat de croissance (2). Au cours d'une étape de procédé B), une structure de résine (4) est agencée dans la tranchée de séparation (3). Au cours d'une étape de procédé C), une matière de scellement (6) est placée sur le côté (10A) de la séquence de couches semi-conductrices (10) qui est opposé au substrat de croissance (2), de sorte que la matière de scellement (6) soit en contact latéral avec au moins une partie de la structure de résine (4).
(DE) Es wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils angegeben, wobei in einem Verfahrensschritt A) ein Bereitstellen eines Aufwachssubstrats (2) mit einer darauf angeordneten Halbleiterschichtenfolge (10) erfolgt, welche zur Emission von Licht geeignet ist, wobei die Halbleiterschichtenfolge (10) zumindest einen Trenngraben (3) umfasst, welcher sich zumindest teilweise durch die Halbleiterschichtenfolge (10) von einer dem Aufwachssubstrat (2) abgewandten Seite (10a) der Halbleiterschichtenfolge (10) in Richtung des Aufwachssubstrats (2) erstreckt. In einem Verfahrensschritt B) erfolgt ein Anordnen einer Lackstruktur (4) im Trenngraben (3). In einem Verfahrensschritt C) erfolgt ein Anordnen eines Vergusses (6) auf der dem Aufwachssubstrat (2) abgewandten Seite (10a) der Halbleiterschichtenfolge (10), so dass der Verguss (6) mit zumindest einem Teil der Lackstruktur (4) seitlich in Kontakt ist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)