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1. (WO2018040990) POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL

Pub. No.:    WO/2018/040990    International Application No.:    PCT/CN2017/098627
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Thu Aug 24 01:59:59 CEST 2017
IPC: C08G 77/16
H01L 21/02
Applicants: TORAY ADVANCED MATERIALS RESEARCH LABORATORIES (CHINA) CO., LTD.
东丽先端材料研究开发(中国)有限公司
TORAY INDUSTRIES, INC.
东丽株式会社
Inventors: XU, Fangrong
徐芳荣
LI, Ping
李平
IKEDA, Takeshi
池田武史
SONG, Wei
宋韡
JIN, Guangnan
金光男
UMEHARA, Masaaki
梅原正明
KITADA, Tsuyoshi
北田刚
Title: POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL
Abstract:
Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below, wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.