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1. (WO2018040683) WET ETCHING DEVICE AND WET ETCHING METHOD FOR OXIDE SEMICONDUCTOR FILM

Pub. No.:    WO/2018/040683    International Application No.:    PCT/CN2017/089369
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Thu Jun 22 01:59:59 CEST 2017
IPC: H01L 21/67
H01L 21/467
Applicants: SUN YAT-SEN UNIVERSITY
中山大学
FOSHAN RESEARCH INSTITUTE OF SUN YAT-SEN UNIVERSITY
佛山市中山大学研究院
Inventors: WANG, Gang
王钢
YAN, Linchao
闫林超
FAN, Bingfeng
范冰丰
MA, Xuejin
马学进
CHEN, Zimin
陈梓敏
Title: WET ETCHING DEVICE AND WET ETCHING METHOD FOR OXIDE SEMICONDUCTOR FILM
Abstract:
A wet etching device and a wet etching method for an oxide semiconductor film. The wet etching device comprises: a manual sheet loading station (11), an etching paste spraying station (12), a reaction station (13), a cleaning station (14), an air-drying station (15), a pick-up station (16), a tooling tray recycling station (17), and a conveying apparatus. After being placed on a tooling tray (36) of the manual sheet loading station, a ZnO sheet sequentially passes the etching paste spraying station, the reaction station, the cleaning station, the air-drying station, and the pick-up station, and the empty tooling tray after pick-up is conveyed by the tooling tray recycling station to the manual sheet loading station for the next use. The wet etching device and the wet etching method can effectively alleviate the problem of lateral corrosion of ZnO films, and improve the product pass rate and the utilization rate of etching chemicals, and can be applied to large-scale continuous batch production.