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1. (WO2018040588) MAGNETRON ELEMENT AND MAGNETRON SPUTTERING APPARATUS
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Pub. No.: WO/2018/040588 International Application No.: PCT/CN2017/081325
Publication Date: 08.03.2018 International Filing Date: 21.04.2017
IPC:
H01J 25/50 (2006.01) ,H01J 37/34 (2006.01) ,C23C 14/35 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
25
Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
50
Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
34
operating with cathodic sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
Applicants:
北京北方华创微电子装备有限公司 BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. [CN/CN]; 中国北京市 北京经济技术开发区文昌大道8号 No. 8 Wenchang Avenue Beijing Economic-Technological Development Area Beijing 100176, CN
Inventors:
杨玉杰 YANG, Yujie; CN
Agent:
北京天昊联合知识产权代理有限公司 TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS; 中国北京市 东城区建国门内大街28号民生金融中心D座10层张天舒 Tianshu ZHANG 10th Floor, Tower D, Minsheng Financial Center, 28 Jianguomennei Avenue, Dongcheng District Beijing 100005, CN
Priority Data:
201610779067.930.08.2016CN
Title (EN) MAGNETRON ELEMENT AND MAGNETRON SPUTTERING APPARATUS
(FR) ÉLÉMENT MAGNÉTRON ET APPAREIL DE PULVÉRISATION MAGNÉTRON
(ZH) 一种磁控元件和磁控溅射装置
Abstract:
(EN) Disclosed are a magnetron element and a magnetron sputtering apparatus. The magnetron element comprises a closed magnetron (1) and a non-closed magnetron (2). A closed plasma path (13) is formed between an inner magnetic pole (11) and an outer magnetic pole (12) of the closed magnetron. A non-closed plasma path (23) is formed between a first magnetic pole (21) and a second magnetic pole (22) of the non-closed magnetron. The closed plasma path and the non-closed plasma path are at least correspondingly located in a radius region from a target centre to a target edge; and the sum of the effective extension length of the closed plasma path in a target radial direction and the effective extension length of the non-closed plasma path in the target radial direction is greater than or equal to the radius of the target. The magnetron element can achieve whole target corrosion of the target, and avoid the presence of particles in a central region of the target, thereby improving the utilization rate of the target, further improving the ionization rate of a metal target during a sputtering process, and at the same time, improving the filling effect of through holes on a wafer.
(FR) L'invention concerne un élément magnétron et un appareil de pulvérisation magnétron. L'élément magnétron comprend un magnétron fermé (1) et un magnétron non fermé (2). Un trajet de plasma fermé (13) est formé entre un pôle magnétique interne (11) et un pôle magnétique externe (12) du magnétron fermé. Un trajet de plasma non fermé (23) est formé entre un premier pôle magnétique (21) et un second pôle magnétique (22) du magnétron non fermé. Le trajet de plasma fermé et le trajet de plasma non fermé sont situés au moins de manière correspondante dans une région de rayon d'un centre cible à un bord cible; et la somme de la longueur d'extension effective du trajet de plasma fermé dans une direction radiale cible et la longueur d'extension effective du trajet de plasma non fermé dans la direction radiale cible est supérieure ou égale au rayon de la cible. L'élément magnétron peut obtenir une corrosion cible entière de la cible, et évite la présence de particules dans une région centrale de la cible, ce qui permet d'améliorer le taux d'utilisation de la cible, améliore davantage le taux d'ionisation d'une cible métallique pendant un processus de pulvérisation, et en même temps, améliorer l'effet de remplissage de trous traversants sur une tranche.
(ZH) 一种磁控元件和磁控溅射装置。磁控元件包括闭合磁控管(1)和非闭合磁控管(2),闭合磁控管的内磁极(11)和外磁极(12)之间组成闭合的等离子体路径(13),非闭合磁控管的第一磁极(21)和第二磁极(22)之间组成非闭合的等离子体路径(23),闭合的等离子体路径和非闭合的等离子体路径至少对应位于靶材的中心到靶材的边缘的半径区域,且闭合的等离子体路径在靶材径向上的有效延伸长度和非闭合的等离子体路径在靶材径向上的有效延伸长度之和大于等于靶材的半径。磁控元件能够实现靶材的全靶腐蚀,避免靶材的中心区域出现颗粒,提高靶材的利用率;还能提高溅射过程中金属靶材的离化率;同时提高晶片上通孔的填充效果。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)