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1. (WO2018040563) NOVEL POLYCRYSTALLINE SILICON THIN-FILM ZENER DIODE AND FABRICATION METHOD THEREFOR

Pub. No.:    WO/2018/040563    International Application No.:    PCT/CN2017/079845
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Apr 11 01:59:59 CEST 2017
IPC: H01L 29/866
H01L 21/329
Applicants: FOSHAN TK SEMICONDUCTOR CO., LTD.
佛山芯光半导体有限公司
Inventors: HE, Zhi
何志
Title: NOVEL POLYCRYSTALLINE SILICON THIN-FILM ZENER DIODE AND FABRICATION METHOD THEREFOR
Abstract:
Disclosed are a polycrystalline silicon thin-film Zener diode and a fabrication method therefor, comprising: a substrate (100), and a passivation layer A (200) and a polycrystalline silicon thin film (300) sequentially grown on the substrate (100), wherein an N-type doped region (301) is formed in a part of the polycrystalline silicon thin film (300), and a P-type doped region (302) is formed in another part of the polycrystalline silicon thin film (300); a passivation layer B (400), located in an upper surface region of the polycrystalline silicon thin film (300); an electrode (500) on the N-type doped region (301), the electrode (500) being located above the N-type doped region (301) and above a portion of the passivation layer (401); an electrode (600) on the P-type doped region (302), the electrode (600) being located above the P-type doped region (302) and above a portion of the passivation layer (402). Activating N-type dopants and P-type dopants by using laser annealing may improve the activation processes in a traditional high-temperature furnace, while featuring a short time and high flexibility.