WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2018040471) CIRCUIT AND METHOD FOR DRIVING AMOLED PIXEL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/040471    International Application No.:    PCT/CN2017/070693
Publication Date: 08.03.2018 International Filing Date: 10.01.2017
IPC:
G09G 3/3225 (2016.01), G09G 3/3258 (2016.01)
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; No. 9-2, Tangming Road Guangming New District Shenzhen, Guangdong 518132 (CN)
Inventors: WANG, Limin; (CN)
Agent: YUHONG INTELLECTUAL PROPERTY LAW FIRM; WU, Dajian / WANG, Hao West Wing, Suite 713, One Junefield Plaza 6 Xuanwumenwai Street, Xicheng District Beijing 100052 (CN)
Priority Data:
201610795545.5 31.08.2016 CN
Title (EN) CIRCUIT AND METHOD FOR DRIVING AMOLED PIXEL
(FR) CIRCUIT ET PROCÉDÉ D'ATTAQUE D'UN PIXEL AMOLED
(ZH) 一种用于驱动AMOLED像素的电路和方法
Abstract: front page image
(EN)Provided are a circuit and method for driving an AMOLED pixel. The circuit comprises: a first transistor (T1); a second transistor (T2); a grayscale storage capacitor (Cst); and a threshold storage capacitor (Cth) having one end connected to one end of the grayscale storage capacitor (Cst) and the other end connected to a drain of the second transistor (T2) to store a threshold voltage of the second transistor (T2).
(FR)L'invention concerne un circuit et un procédé d'attaque d'un pixel AMOLED. Le circuit comprend : un premier transistor (T1) ; un second transistor (T2) ; un condensateur mémoire d'échelle de gris (Cst) ; et un condensateur mémoire de seuil (Cth) ayant une extrémité connectée à une extrémité du condensateur mémoire d'échelle de gris (Cst) et l'autre extrémité connectée à un drain du second transistor (T2) pour mémoriser une tension de seuil du second transistor (T2).
(ZH)一种用于驱动AMOLED像素的电路和方法,该电路包括第一晶体管(T1);第二晶体管(T2);灰阶存储电容(Cst);阈值存储电容(Cth),其一端连接灰阶存储电容(Cst)的另一端,另一端连接第二晶体管(T2)的漏极,用于存储第二晶体管(T2)的阈值电压。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)