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1. (WO2018040124) PREPARATION METHOD FOR AND APPLICATION OF NON-POLAR LED EPITAXIAL WAFER GROWING ON R-PLANE SAPPHIRE SUBSTRATE
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Pub. No.: WO/2018/040124 International Application No.: PCT/CN2016/098634
Publication Date: 08.03.2018 International Filing Date: 10.09.2016
IPC:
H01L 33/00 (2010.01) ,H01L 33/12 (2010.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
华南理工大学 SOUTH CHINA UNIVERSITY OF TECHNOLOGY [CN/CN]; 中国广东省广州市 天河区五山路381号 No. 381 Wushan Road, Tianhe District Guangzhou, Guangdong 510640, CN
Inventors:
李国强 LI, Guoqiang; CN
杨为家 YANG, Weijia; CN
王文樑 WANG, Wenliang; CN
Agent:
广州市华学知识产权代理有限公司 GUANGZHOU HUAXUE INTELLECTUAL PROPERTY AGENCY CO., LTD; 中国广东省广州市 五山路381号物资大楼首层 1st Floor, Material Building No.381 Wushan Road Tianhe District, Guangzhou Guangdong 510640, CN
Priority Data:
201610754992.629.08.2016CN
Title (EN) PREPARATION METHOD FOR AND APPLICATION OF NON-POLAR LED EPITAXIAL WAFER GROWING ON R-PLANE SAPPHIRE SUBSTRATE
(FR) PROCÉDÉ DE PRÉPARATION POUR ET APPLICATION D'UNE TRANCHE ÉPITAXIALE DE DEL NON POLAIRE SE DÉVELOPPANT SUR UN SUBSTRAT DE SAPHIR À PLAN R
(ZH) 生长在r面蓝宝石衬底上的非极性LED外延片的制备方法及应用
Abstract:
(EN) A preparation method for a non-polar LED epitaxial wafer growing on an r-plane sapphire substrate, comprising the following steps: (1) using an r-plane sapphire substrate (11) and selecting a crystal orientation; (2) performing surface cleaning treatment on the r-plane sapphire substrate (11); (3) transferring the r-plane sapphire substrate (11) treated in step (2) into an ultrahigh vacuum growth chamber of pulsed laser deposition equipment so as to grow a non-polar GaN buffer layer (12); (4) epitaxially laterally overgrowing a non-polar non-doped u-GaN layer (13) by using an MOCVD process; (5) growing a non-polar n-type doped GaN film (14) by using the MOCVD process; (6) growing a non-polar InGaN/GaN quantum well (15) by using the MOCVD process; and (7) growing a non-polar p-type doped GaN film (16) by using the MOCVD process. The preparation method has such characteristics as a simple process, time-saving, high efficiency and being capable of remarkably improving the quality of a film crystal and device performances.
(FR) Un procédé de préparation d'une tranche épitaxiale de DEL non polaire se développant sur un substrat de saphir à plan r comprend les étapes suivantes : (1) l'utilisation d'un substrat de saphir à plan r (11) et la sélection d'une orientation de cristal; (2) effectuer un traitement de nettoyage de surface sur le substrat de saphir à plan r (11); (3)le transfert du substrat de saphir à plan r (11) traité à l'étape (2) dans une chambre de croissance sous ultravide d'un équipement de dépôt par laser pulsé de manière à faire croître une couche tampon de GaN non polaire (12); (4) sur-croissance épitaxiale latérale d'une couche d'u-GaN non dopé non polaire (13) à l'aide d'un procédé MOCVD; (5) la croissance d'un film de GaN dopé de type n non polaire (14) à l'aide du procédé MOCVD; (6) la croissance d'un puits quantique InGaN/GaN non polaire (15) à l'aide du procédé MOCVD; et (7) la croissance d'un film GaN dopé de type p non polaire (16) à l'aide du procédé MOCVD. Le procédé de préparation présente des caractéristiques telles qu'un processus simple, une économie de temps, une efficacité élevée et est capable d'améliorer remarquablement la qualité d'un cristal de film et des performances de dispositif.
(ZH) 一种生长在r面蓝宝石衬底上的非极性LED外延片的制备方法,包括以下步骤:(1)采用r面蓝宝石衬底(11),选取晶体取向;(2)对r面蓝宝石衬底(11)进行表面清洁处理;(3)将步骤(2)处理后的r面蓝宝石衬底(11)转移到脉冲激光沉积设备的超高真空生长室生长非极性GaN缓冲层(12);(4)采用MOCVD工艺横向外延过生长非极性非掺杂u-GaN层(13);(5)采用MOCVD工艺生长非极性n型掺杂GaN薄膜(14);(6)采用MOCVD工艺生长非极性InGaN/GaN量子阱(15);(7)采用MOCVD工艺生长非极性p型掺杂GaN薄膜(16)。制备方法具有工艺简单、省时高效、可大幅度提高薄膜晶体质量和器件性能等特点。
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)