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1. (WO2018040123) LED EPITAXIAL WAFER GROWN ON SCANDIUM MAGNESIUM ALUMINUM OXIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

Pub. No.:    WO/2018/040123    International Application No.:    PCT/CN2016/098633
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Sun Sep 11 01:59:59 CEST 2016
IPC: H01L 33/00
H01L 33/32
H01L 33/06
Applicants: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
华南理工大学
Inventors: LI, Guoqiang
李国强
WANG, Wenliang
王文樑
YANG, Weijia
杨为家
Title: LED EPITAXIAL WAFER GROWN ON SCANDIUM MAGNESIUM ALUMINUM OXIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
Abstract:
An LED epitaxial wafer grown on a scandium magnesium aluminum oxide substrate, comprising: a GaN buffer layer (11) grown on the scandium magnesium aluminum oxide substrate (10), an Al nano-island layer (12) grown on the GaN buffer layer (11), an undoped GaN layer (13) grown on the Al nano-island layer (12), an n-type doped GaN film (14) grown on the undoped GaN layer (13), an InGaN/GaN quantum well (15) grown on the n-type doped GaN film (14), a p-type doped GaN film (16) grown on the InGaN/GaN quantum well (15). Also disclosed is a method for preparing the above LED epitaxial wafer grown on a scandium magnesium aluminum oxide substrate. The present invention has the advantages of having a simple growth process and low preparation cost; and, the prepared LED epitaxial wafer features flat surfaces, low defect-density and good photoelectric performances.