Search International and National Patent Collections

1. (WO2018039962) RADIATION DETECTOR AND FABRICATING METHOD THEREOF

Pub. No.:    WO/2018/039962    International Application No.:    PCT/CN2016/097459
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Thu Sep 01 01:59:59 CEST 2016
IPC: G01T 1/20
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
Inventors: TIAN, Hui
Title: RADIATION DETECTOR AND FABRICATING METHOD THEREOF
Abstract:
A radiation detector having a plurality of pixels. The radiation detector includes a base substrate (201); a thin film transistor (202) on the base substrate (201); a scintillator layer (203) on a side of the thin film transistor (202) distal to the base substrate (201) for converting radiation into light; and a photosensor (PS) on a side of the thin film transistor (202) distal to the base substrate (201) and proximal to the scintillator layer (203) for converting light to electrical charges. The photosensor (PS) and the thin film transistor (202) are in two different vertically stacked layers of a vertically stacked multi-layer structure. The photosensor (PS) includes a photoelectric conversion layer (204) optically coupled to the scintillator layer (203).