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1. (WO2018039690) OPTOELECTRONIC INFRARED SENSOR
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Pub. No.: WO/2018/039690 International Application No.: PCT/AT2017/050023
Publication Date: 08.03.2018 International Filing Date: 31.08.2017
IPC:
H01L 31/109 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
109
the potential barrier being of the PN heterojunction type
Applicants:
UNIVERSITÄT LINZ [AT/AT]; Altenberger Straße 69 4040 Linz, AT
Inventors:
GLOWACKI, Eric Daniel; AT
IVANDA, Mile; HR
DEREK, Vedran; HR
SARICIFTCI, Niyazi Serdar; AT
Agent:
HÜBSCHER, Helmut; AT
HÜBSCHER, Gerd; AT
HELLMICH, Karl Winfried; AT
Priority Data:
A 50778/201601.09.2016AT
Title (EN) OPTOELECTRONIC INFRARED SENSOR
(FR) CATPEUR INFRAROUGE OPTOÉLECTRONIQUE
(DE) OPTOELEKTRONISCHER INFRAROTSENSOR
Abstract:
(EN) The invention relates to an optoelectronic infrared sensor having a first and a second semiconductor layer (1, 2), which are connected to respective electrodes (3, 4), wherein the first semiconductor layer (1) of silicon forms a heterojunction with the second semiconductor layer (2). In order to obtain advantageous electrical characteristics, according to the invention, the second semiconductor layer (2) is constructed of a metal oxide semiconductor.
(FR) L’invention concerne un capteur infrarouge optoélectronique comprenant une première et une deuxième couches semiconductrices (1, 2) respectivement raccordées à une électrode (3, 4), la première couche semiconductrice (1) en silicium formant avec la deuxième couche semiconductrice (2) une hétérojonction. Afin d’obtenir des propriétés électriques avantageuses, la deuxième couche semiconductrice (2) est réalisée dans un semiconducteur à base d’oxyde métallique.
(DE) Es wird ein optoelektronischer Infrarotsensor mit einer ersten und einer zweiten je an eine Elektrode (3, 4) angeschlossenen Halbleiterschicht (1, 2) beschrieben, wobei die erste Halbleiterschicht (1) aus Silizium mit der zweiten Halbleiterschicht (2) einen Heteroübergang bildet. Um vorteilhafte elektrische Eigenschaften zu erhalten, wird vorgeschlagen, dass die zweite Halbleiterschicht (2) aus einem Metalloxid-Halbleiter aufgebaut ist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)