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1. (WO2018039349) NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
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Pub. No.: WO/2018/039349 International Application No.: PCT/US2017/048215
Publication Date: 01.03.2018 International Filing Date: 23.08.2017
IPC:
H01L 27/11521 (2017.01) ,H01L 29/788 (2006.01) ,H01L 45/00 (2006.01) ,H01L 43/08 (2006.01)
[IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
788
with floating gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants:
KWON, Euipil [KR/US]; US
Inventors:
KWON, Euipil; US
Agent:
KWON, Sang, Chul; US
Priority Data:
15/246,16124.08.2016US
Title (EN) NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
(FR) DISPOSITIF DE MÉMOIRE NON VOLATILE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) Provided are a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device includes a semiconductor substrate, a first and a second diffusion regions formed under a surface of the semiconductor substrate, a storage layer formed on the semiconductor substrate, a gate stacked on the storage layer, wherein the first diffusion region may at least one of active regions being separated by a part of the semiconductor substrate forming a channel region., wherein the second diffusion region may include an active region intersecting the gate insulating layer, wherein the storage layer may include an insulating layer or a variable resistor, and may service as a data storage layer to store data, and may be selected by a structure including the first and the second diffusion regions.
(FR) L'invention concerne un dispositif un dispositif de mémoire non volatile et son procédé de fabrication. Le dispositif de mémoire non volatile comprend un substrat semi-conducteur, une première et une seconde région de diffusion formées sous une surface du substrat semi-conducteur, une couche de stockage formée sur le substrat semi-conducteur, une grille empilée sur la couche de stockage, la première région de diffusion pouvant comprendre au moins une des régions actives étant séparée par une partie du substrat semi-conducteur formant une région de canal, la seconde région de diffusion pouvant comprendre une région active croisant la couche d'isolation de grille, la couche de stockage pouvant comprendre une couche isolante ou une résistance variable, et peut être utilisée en tant que couche de stockage de données pour stocker des données, et peut être sélectionnée par une structure comprenant les première et seconde régions de diffusion.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)