Search International and National Patent Collections

1. (WO2018038927) HIGH LIGHT-EXTRACTION EFFICIENCY (LEE) LIGHT-EMITTING DIODE (LED)

Pub. No.:    WO/2018/038927    International Application No.:    PCT/US2017/046255
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Fri Aug 11 01:59:59 CEST 2017
IPC: H01L 33/00
H01L 33/18
H01L 21/02
H01L 33/20
Applicants: THE PENN STATE RESEARCH FOUNDATION
Inventors: YIN, Shizhuo
CHEN, Chang-Jiang
CHAO, Ju-Hung
ZHU, Wenbin
Title: HIGH LIGHT-EXTRACTION EFFICIENCY (LEE) LIGHT-EMITTING DIODE (LED)
Abstract:
A light-emitting diode, comprising a substrate that has a first surface and an opposing second surface. A reflection layer is disposed on the first surface of the substrate and a light- emitting diode structure is arranged on the second surface of the substrate. The light-emitting diode structure includes a first semiconducting layer, an active layer and a second semiconducting layer disposed consecutively on the second surface. A plurality of protruding asymmetric micro-structured elements define at least a part of the second surface of the substrate such that at least a portion of a surface of each micro- structured element is disposed at an obtuse angle to the first surface of the substrate when measured from within the respective micro- structured element. The first semiconducting layer and the second semiconducting layer respectively have a first electrode and a second electrode.