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1. (WO2018038849) HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) BIT CELL ARRAY

Pub. No.:    WO/2018/038849    International Application No.:    PCT/US2017/043691
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Wed Jul 26 01:59:59 CEST 2017
IPC: G11C 11/16
Applicants: QUALCOMM INCORPORATED
Inventors: KAN, Jimmy Jianan
PARK, Chando
WANG, Peiyuan
KIM, Sungryul
KANG, Seung Hyuk
Title: HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) BIT CELL ARRAY
Abstract:
A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells includes a perpendicular magnetic tunnel junction (pMTJ) -a magnetic tunnel junction with perpendicular anisotropy- including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer supports the free layer. A driver is operable to set a state of at least one of the plurality of bit cells, the driver being configured to simultaneously drive a current along the spin-Hall conductive material to generate via a Spin Hall effect a Spin Orbit Transfer -SOT- current flowing through the pMTJ and drive a further current through the pMTJ and a portion of the spin- hall conductive material layer, the further current generating with the reference layer a Spin-transfer-torque -STT- current through the pMTJ.