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1. (WO2018038806) FLOATING GATE SWITCH
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Pub. No.: WO/2018/038806 International Application No.: PCT/US2017/039765
Publication Date: 01.03.2018 International Filing Date: 28.06.2017
IPC:
H03K 17/06 (2006.01) ,H03K 17/693 (2006.01) ,H04B 1/44 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
06
Modifications for ensuring a fully conducting state
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
693
Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38
Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
40
Circuits
44
Transmit/receive switching
Applicants:
QUALCOMM INCORPORATED [US/US]; Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121-1714, US
Inventors:
DABAG, Hayg-Taniel; US
ASURI, Bhushan, Shanti; US
YAN, Hongyan; US
HWU, Sy-Chyuan; US
YOON, Youngchang; US
Agent:
COLBY, Michael K.; US
TRAVIS, Henderson; US
Priority Data:
15/634,80027.06.2017US
62/380,19726.08.2016US
Title (EN) FLOATING GATE SWITCH
(FR) COMMUTATEUR À GRILLE FLOTTANTE
Abstract:
(EN) Various aspects of this disclosure describe configuring and operating a transistor switch. Examples include a self-biasing circuit that contains a diode-connected transistor whose source or drain is connected to the gate of a transistor configured as a switch. The diode-connected transistor is enabled and disabled responsive to voltage swings in the input signal to the transistor configured as a switch. When enabled, the diode-connected transistor may charge the floating gate voltage of the transistor configured as a switch. When disabled, the diode-connected transistor may acts as a high impedance to inhibit voltage discharge from the gate of the transistor configured as a switch.
(FR) Selon divers aspects, la présente invention concerne la configuration et le fonctionnement d'un commutateur à transistor. Des modes de réalisation cités à titre d'exemple comprennent un circuit d'auto-polarisation qui contient un transistor connecté à une diode dont la source ou le drain est connecté à la grille d'un transistor configuré en tant que commutateur. Le transistor connecté à une diode est activé et désactivé en réponse à des oscillations de tension dans le signal d'entrée vers le transistor configuré en tant que commutateur. Lorsqu'il est activé, le transistor connecté à une diode peut charger la tension de grille flottante du transistor configuré en tant que commutateur. Lorsqu'il est désactivé, le transistor connecté à une diode peut agir en tant qu'impédance élevée pour empêcher une décharge de tension à partir de la grille du transistor configuré en tant que commutateur.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)