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1. (WO2018038786) THREE-DIMENSIONAL MEMORY DEVICE WITH CHARGE CARRIER INJECTION WELLS FOR VERTICAL CHANNELS AND METHOD OF MAKING AND USING THEREOF

Pub. No.:    WO/2018/038786    International Application No.:    PCT/US2017/035024
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Wed May 31 01:59:59 CEST 2017
IPC: H01L 29/786
H01L 29/788
H01L 29/792
H01L 27/11556
H01L 27/11582
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: ZHANG, Yanli
ALSMEIER, Johann
KAI, James
Title: THREE-DIMENSIONAL MEMORY DEVICE WITH CHARGE CARRIER INJECTION WELLS FOR VERTICAL CHANNELS AND METHOD OF MAKING AND USING THEREOF
Abstract:
A buried source semiconductor layer and p-doped semiconductor material portions are formed over a first portion of a substrate. The buried source semiconductor layer is an n- doped semiconductor material, and the p-doped semiconductor material portions are embedded within the buried source semiconductor layer. An alternating stack of insulating layers and spacer material layers is formed over the substrate. Memory stack structures are formed through the alternating stack. The spacer material layers are formed as, or are replaced with, electrically conductive layers. The buried source semiconductor layer may be formed prior to, or after, formation of the alternating stack. The buried source semiconductor layer underlies the alternating stack and overlies the first portion of the substrate, and contacts at least one surface of the vertical semiconductor channels. The p-doped semiconductor material portions contact at least one surface of a respective subset of the vertical semiconductor channels.