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1. (WO2018038785) MULTI-TIER MEMORY STACK STRUCTURE CONTAINING TWO TYPES OF SUPPORT PILLAR STRUCTURES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/038785    International Application No.:    PCT/US2017/035006
Publication Date: 01.03.2018 International Filing Date: 30.05.2017
IPC:
H01L 27/1158 (2017.01), H01L 29/788 (2006.01), H01L 29/792 (2006.01), H01L 27/11531 (2017.01), H01L 27/11548 (2017.01), H01L 27/11573 (2017.01), H01L 27/11575 (2017.01), H01L 27/11556 (2017.01), H01L 27/11582 (2017.01)
Applicants: SANDISK TECHNOLOGIES LLC [US/US]; 6900 North Dallas Parkway Suite 325 Plano, Texas 75024 (US)
Inventors: KAWAMURA, Takeshi; (US).
FUNAYAMA, Kota; (US)
Agent: RADOMSKY, Leon; (US).
COHN, Joanna; (US).
CONNOR, David; (US).
GAUL, Allison; (US).
GAYOSO, Tony; (US).
GERETY, Todd; (US).
GILL, Matthew; (US).
GREGORY, Shaun D.; (US).
HANSEN, Robert; (US).
HUANG, Stephen; (US).
HYAMS, David; (US).
JOHNSON, Timothy; (US).
MAZAHERY, Benjamin; (US).
MURPHY, Timothy; (US).
NGUYEN, Jaqueline; (US).
O'BRIEN, Michelle; (US).
PARK, Byeongju; (US).
RUTT, Steven; (US).
SIMON, Phyllis; (US).
SULSKY, Martin; (US).
GEMMEL, Elizabeth; (US)
Priority Data:
15/243,260 22.08.2016 US
Title (EN) MULTI-TIER MEMORY STACK STRUCTURE CONTAINING TWO TYPES OF SUPPORT PILLAR STRUCTURES
(FR) STRUCTURE D'EMPILEMENT DE MÉMOIRE MULTINIVEAU CONTENANT DEUX TYPES DE STRUCTURES DE PILIER DE SUPPORT
Abstract: front page image
(EN)A first tier structure including a first alternating stack of first insulating layers and first sacrificial material layers is formed over a substrate. First support pillar structures are formed through the first tier structure. A second tier structure including a second alternating stack of second insulating layers and second sacrificial material layers is formed over the first tier structure. Memory stack structures and second support pillar structures are formed through the second tier structure. The first and second sacrificial material layers are replaced with first and second electrically conductive layers while the first support pillar structures, the second support pillar structures, and the memory stack structures provide structural support to the first and second insulating layers. By limiting the spatial extent of the first support pillar structures within the first tier structure, electrical short to backside contact via structures can be reduced.
(FR)Une structure de premier niveau comprenant un premier empilement alterné de premières couches isolantes et de premières couches de matériau sacrificiel est formée sur un substrat. Des premières structures de pilier de support sont formées à travers la première structure de niveau. Une seconde structure de niveau comprenant un second empilement alterné de secondes couches isolantes et de secondes couches de matériau sacrificiel est formée sur la première structure de niveau. Des structures d'empilement de mémoire et des secondes structures de pilier de support sont formées à travers la seconde structure de niveau. Les première et seconde couches de matériau sacrificiel sont remplacées par des première et seconde couches électro-conductrices tandis que les premières structures de pilier de support, les secondes structures de pilier de support, et les structures d'empilement de mémoire fournissent un support structurel aux première et seconde couches isolantes. En limitant l'étendue spatiale des premières structures de pilier de support à l'intérieur de la structure de premier niveau, des structures de trou d'interconnexion de court-circuit électrique à côté arrière peuvent être réduites.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)