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1. (WO2018038547) ATOMIC LAYER DEPOSITION EQUIPMENT AND ATOMIC LAYER DEPOSITION METHOD USING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/038547    International Application No.:    PCT/KR2017/009246
Publication Date: 01.03.2018 International Filing Date: 24.08.2017
IPC:
C23C 16/455 (2006.01), C23C 16/44 (2006.01), C23C 16/54 (2006.01)
Applicants: IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) [KR/KR]; 222, Wangsimni-ro Seongdong-gu Seoul 04763 (KR)
Inventors: JEON, Hyeongtag; (KR)
Agent: PARK, Sangyoul; (KR)
Priority Data:
10-2016-0108985 26.08.2016 KR
Title (EN) ATOMIC LAYER DEPOSITION EQUIPMENT AND ATOMIC LAYER DEPOSITION METHOD USING SAME
(FR) ÉQUIPEMENT DE DÉPÔT DE COUCHE ATOMIQUE ET PROCÉDÉ DE DÉPÔT DE COUCHE ATOMIQUE UTILISANT LEDIT ÉQUIPEMENT DE DÉPÔT DE COUCHE ATOMIQUE
(KO) 원자층 증착 장비 및 그를 이용한 원자층 증착 방법
Abstract: front page image
(EN)Atomic layer deposition equipment is provided. Atomic layer deposition equipment according to one embodiment of the present invention comprises: a gas supply module for simultaneously injecting, to different areas of a substrate to be deposited, an atomic layer deposition gas containing a source gas, a purge gas, and a reactive gas; and a stage which is provided on one side of the gas supply module and linearly transfers the substrate to be deposited, wherein at least two atomic layers may be deposited on the substrate to be deposited as the substrate to be deposited is linearly transferred along the stage, in one cycle.
(FR)L'invention concerne un équipement de dépôt de couche atomique. Un équipement de dépôt de couche atomique selon un mode de réalisation de la présente invention comprend : un module d'alimentation en gaz permettant d'injecter simultanément, à différentes zones d'un substrat à plaquer, un gaz de dépôt de couche atomique comportant un gaz source, un gaz de purge et un gaz réactif ; et un étage qui est disposé d'un côté du module d'alimentation en gaz et transfère linéairement le substrat à plaquer, au moins deux couches atomiques pouvant être déposées sur le substrat à plaquer étant donné que le substrat à plaquer est transféré de manière linéaire le long de l'étage, en un cycle.
(KO)원자층 증착 장비가 제공된다. 본 발명의 일 실시 예에 따른 원자층 증착 장비는, 소스 가스, 퍼지 가스 및 반응 가스를 포함하는 원자층 증착 가스를 동시에 증착 대상 기판의 다른 영역에 분사하는 가스 공급 모듈 및 상기 가스 공급 모듈의 일 측에 마련되며, 상기 증착 대상 기판을 직선으로 이송시키는 스테이지를 포함하되, 상기 스테이지를 따라 상기 증착 대상 기판이 상기 직선으로 1 싸이클(cycle) 이송됨에 따라 2층 이상의 원자층이 상기 증착 대상 기판에 증착될 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)