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1. (WO2018038478) SOLAR CELL AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/038478 International Application No.: PCT/KR2017/009075
Publication Date: 01.03.2018 International Filing Date: 21.08.2017
IPC:
H01L 31/18 (2006.01) ,H01L 31/0236 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/0445 (2014.01) ,H01L 31/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0236
Special surface textures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
[IPC code unknown for H01L 31/0445]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants: JUSUNG ENGINEERING CO., LTD.[KR/KR]; 240, Opo-ro, Opo-eup, Gwangju-si Gyeonggi-do 12773, KR
Inventors: SEO, Jeong Ho; KR
KWON, Soon Bum; KR
KIM, Ki-Duck; KR
KIM, Jong In; KR
PARK, Chang Kyun; KR
SHIN, Won Suk; KR
LIM, Kyoung Jin; KR
JIN, Beop Jong; KR
Agent: ASTRAN INT'L IP GROUP; (ShinSung Building, Yeoksam-dong) 5th Floor, 233, Yeoksam-ro, Gangnam-gu, Seoul 06225, KR
Priority Data:
10-2016-010761924.08.2016KR
Title (EN) SOLAR CELL AND METHOD FOR MANUFACTURING SAME
(FR) CELLULE SOLAIRE ET SON PROCÉDÉ DE FABRICATION
(KO) 태양전지 및 그 제조 방법
Abstract:
(EN) Provided is a method for manufacturing a solar cell comprising: a step of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer having a polarity different from that of the first semiconductor layer on a lower surface of the semiconductor wafer; a step of forming a first transparent conductive layer on an upper surface of the first semiconductor layer while exposing a portion of the first semiconductor layer to the outside, and forming a second transparent conductive layer on a lower surface of the second semiconductor layer while exposing a portion of the second semiconductor layer to the outside; and a step of plasma-treating at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment step comprises a step of removing a portion of the first semiconductor layer exposed to the outside and a portion of the second semiconductor layer.
(FR) L'invention concerne un procédé de fabrication d'une cellule solaire comprenant : une étape de formation d'une première couche semi-conductrice sur une surface supérieure d'une tranche de semi-conducteur et de formation d'une seconde couche semi-conductrice ayant une polarité différente de celle de la première couche semi-conductrice sur une surface inférieure de la tranche de semi-conducteur ; une étape de formation d'une première couche conductrice transparente sur une surface supérieure de la première couche semi-conductrice tout en exposant une partie de la première couche semi-conductrice à l'extérieur, et de formation d'une seconde couche conductrice transparente sur une surface inférieure de la seconde couche semi-conductrice tout en exposant une partie de la seconde couche semi-conductrice à l'extérieur ; et une étape de traitement au plasma de la première couche conductrice transparente et/ou de la seconde couche conductrice transparente, l'étape de traitement au plasma comprenant une étape de retrait d'une partie de la première couche semi-conductrice exposée à l'extérieur et d'une partie de la seconde couche semi-conductrice.
(KO) 본 발명은 반도체 웨이퍼의 상면 상에 제1 반도체층을 형성하고, 상기 반도체 웨이퍼의 하면 상에 상기 제1 반도체층과 상이한 극성을 갖는 제2 반도체층을 형성하는 공정; 상기 제1 반도체층의 일 부분을 외부로 노출시키면서 상기 제1 반도체층의 상면 상에 제1 투명 도전층을 형성하고, 상기 제2 반도체층의 일 부분을 외부로 노출시키면서 상기 제2 반도체층의 하면 상에 제2 투명 도전층을 형성하는 공정; 및 상기 제1 투명 도전층 및 상기 제2 투명 도전층 중 적어도 하나에 대한 플라즈마 처리 공정을 포함하여 이루어지고, 상기 플라즈마 처리 공정은 상기 외부로 노출된 상기 제1 반도체층의 일 부분 및 상기 제2 반도체층의 일 부분을 제거하는 공정을 포함하여 이루어진 태양전지의 제조 방법을 제공한다.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)