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1. WO2018038477 - SUPERLATTICE THERMOELECTRIC MATERIAL AND THERMOELECTRIC DEVICE USING SAME

Publication Number WO/2018/038477
Publication Date 01.03.2018
International Application No. PCT/KR2017/009073
International Filing Date 21.08.2017
IPC
H01L 35/14 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
H01L 35/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
18comprising arsenic or antimony or bismuth
H01L 35/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device
H01L 35/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
CPC
H01L 35/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
H01L 35/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
18comprising arsenic or antimony or bismuth
H01L 35/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
26using compositions changing continuously or discontinuously inside the material
H01L 35/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device ; including details about, e.g., housing, insulation, geometry, module
Applicants
  • 엘지전자 주식회사 LG ELECTRONICS INC. [KR]/[KR]
  • 경희대학교 산학협력단 UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY [KR]/[KR]
Inventors
  • 류병길 RYU, Byunggil
  • 이종수 RHYEE, Jongsoo
Agents
  • 김용인 KIM, Yong In
  • 방해철 BAHNG, Hae Cheol
Priority Data
10-2016-010618922.08.2016KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SUPERLATTICE THERMOELECTRIC MATERIAL AND THERMOELECTRIC DEVICE USING SAME
(FR) MATÉRIAU THERMOÉLECTRIQUE À SUPER-RÉSEAU ET DISPOSITIF THERMOÉLECTRIQUE L'UTILISANT
(KO) 초격자 열전소재 및 이를 이용한 열전소자
Abstract
(EN)
The present invention relates to a phosphor and, more particularly, to a yellow light-emitting phosphor and a light-emitting device using the same. The yellow light-emitting phosphor of the present invention comprises: a first phosphor including at least one of Lu3Al5O12:Ce and SrSi2O2N2; and a second phosphor which is mixed with the first phosphor to form a mixture, includes Ba2Si5N8, and is excited by near ultraviolet or blue light to emit light having a peak wavelength in the range of 550 to 590 nm, wherein the mixture of the first phosphor and the second phosphor may be excited by the near ultraviolet or blue light, and emit yellow light.
(FR)
La présente invention concerne un luminophore et, plus particulièrement, un luminophore émettant de la lumière jaune et un dispositif électroluminescent l'utilisant. Le luminophore émettant de la lumière jaune de la présente invention comprend : un premier luminophore comprenant au moins un parmi Lu3Al5O12:Ce et SrSi2O2N2; et un second luminophore qui est mélangé au premier luminophore de manière à former un mélange, constitué de Ba2Si5N8, et est excité par la lumière ultraviolette proche ou bleue afin d'émettre une lumière ayant un pic de longueur d'onde situé dans la plage de 550 à 590 nm, le mélange du premier luminophore et du second luminophore pouvant être excité par la lumière ultraviolette proche ou la lumière bleue, et émettre une lumière jaune.
(KO)
본 발명은 형광체에 관한 것으로 특히, 황색 발광 형광체 및 이를 이용한 발광 장치에 관한 것이다. 이러한 본 발명은, 황색 발광 형광체에 있어서, Lu3Al5O12:Ce 및 SrSi2O2N2 중 적어도 어느 하나를 포함하는 제1형광체; 및 상기 제1형광체와 혼합되어 혼합물을 이루며, Ba2Si5N8을 포함하고, 근 자외선 또는 청색 광에 의하여 여기되어 피크 파장이 550 내지 590 nm 대역에 위치하는 광을 발광하는 제2형광체를 포함하여 구성되고, 상기 제1형광체 및 제2형광체의 혼합물은, 상기 근 자외선 또는 청색 광에 의하여 여기되어 황색 광을 발광할 수 있다.
Latest bibliographic data on file with the International Bureau