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1. (WO2018038375) ATOMIC LAYER DEPOSITION DEVICE AND ATOMIC LAYER DEPOSITION METHOD USING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/038375 International Application No.: PCT/KR2017/006695
Publication Date: 01.03.2018 International Filing Date: 26.06.2017
IPC:
C23C 16/455 (2006.01) ,C23C 16/458 (2006.01) ,C23C 16/44 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
Applicants:
주식회사 넥서스비 NEXUSBE CO., LTD. [KR/KR]; 전라북도 전주시 완산구 천잠로 303 문화기술동 121호 121-ho, Munhwagisul-dong 303, Cheonjam-ro, Wansan-gu Jeonju-si Jeollabuk-do 55069, KR
Inventors:
오기영 OH, Kiyoung; KR
최학영 CHOI, Hagyoung; KR
최영태 CHOI, Yeongtae; KR
김동원 KIM, Dongwon; KR
김상훈 KIM, Sanghun; KR
김근식 KIM, Keunsik; KR
Agent:
박상열 PARK, Sangyoul; KR
Priority Data:
10-2016-010898726.08.2016KR
Title (EN) ATOMIC LAYER DEPOSITION DEVICE AND ATOMIC LAYER DEPOSITION METHOD USING SAME
(FR) APPAREIL DE DÉPÔT DE COUCHE ATOMIQUE ET PROCÉDÉ DE DÉPÔT DE COUCHE ATOMIQUE UTILISANT LEDIT APPAREIL DE DÉPÔT DE COUCHE ATOMIQUE
(KO) 원자층 증착 장비 및 그를 이용한 원자층 증착 방법
Abstract:
(EN) An atomic layer deposition device is provided. According to one embodiment of the present invention, an atomic layer deposition device comprises: a gas supply module for simultaneously spraying, at different areas of a substrate to be deposited, atomic layer deposition gases comprising a source gas, a purge gas, and a reaction gas; and a stage arranged on one side of the gas supply module, and including a mounting part having the substrate to be deposited mounted thereon, wherein when the stage rotates once, two or more layers of atomic layers can be deposited on the substrate to be deposited.
(FR) L'invention concerne un dispositif de dépôt de couche atomique. Selon un mode de réalisation de la présente invention, un dispositif de dépôt de couche atomique comprend : un module d'alimentation en gaz pour une pulvérisation simultanée, en différentes zones d'un substrat à déposer, de gaz pour dépôt de couche atomique comprenant un gaz source, un gaz de purge et un gaz de réaction ; et une platine agencée sur un côté du module d'alimentation en gaz, et comportant une partie de montage sur laquelle le substrat à déposer est monté, lorsque la platine tourne une fois, au moins deux couches de couches atomiques pouvant être déposées sur le substrat à déposer.
(KO) 원자층 증착 장비가 제공된다. 본 발명의 일 실시 예에 따른 원자층 증착 장비는, 소스 가스, 퍼지 가스 및 반응 가스를 포함하는 원자층 증착 가스를 동시에 증착 대상 기판의 다른 영역에 분사하는 가스 공급 모듈 및 상기 가스 공급 모듈의 일 측에 마련되며, 상기 증착 대상 기판이 안착되는 안착부를 포함하는 스테이지를 포함하되, 상기 스테이지가 1 회전함에 따라 2층 이상의 원자층이 상기 증착 대상 기판에 증착될 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)