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1. (WO2018038230) PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE
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Pub. No.: WO/2018/038230 International Application No.: PCT/JP2017/030414
Publication Date: 01.03.2018 International Filing Date: 24.08.2017
Chapter 2 Demand Filed: 07.02.2018
IPC:
H04N 5/369 (2011.01) ,H01L 27/146 (2006.01) ,H01L 31/10 (2006.01) ,H04N 5/374 (2011.01) ,H04N 5/378 (2011.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
378
Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
Applicants:
国立大学法人静岡大学 NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY [JP/JP]; 静岡県静岡市駿河区大谷836 836, Ohya, Suruga-ku, Shizuoka-shi, Shizuoka 4228529, JP
Inventors:
川人 祥二 KAWAHITO Shoji; JP
徐 ▲みん▼雄 SEO Min-Woong; JP
安富 啓太 YASUTOMI Keita; JP
白川 雄也 SHIRAKAWA Yuya; JP
Agent:
鈴木 壯兵衞 SUZUKI Sohbe; JP
Priority Data:
2016-16416224.08.2016JP
2016-16416324.08.2016JP
Title (EN) PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ET DISPOSITIF DE CAPTURE D'IMAGE À SEMI-CONDUCTEUR
(JA) 光電変換素子及び固体撮像装置
Abstract:
(EN) Provided are a photoelectric conversion element capable of achieving simultaneously both a wide light receiving region and high speed transfer, and a solid-state image capturing device employing the photoelectric conversion element. This photoelectric conversion element is provided with: a first charge readout region (FD1), a second charge readout region (FD2), a third charge readout region (FD3),..., and an eighth charge readout region (FD8), provided in symmetrical positions with respect to the position of the center of a light receiving region (PD); and a first electric field control electrode (G1), a second electric field control electrode (G2), a third electric field control electrode (G3),..., and an eighth electric field control electrode (G8), which are disposed on either side of charge transport paths leading respectively from the position of the center of the light receiving region (PD) to the first charge readout region (FD1), the second charge readout region (FD2), the third charge readout region (FD3),..., and the eighth charge readout region (FD8), and which cause the depletion potentials of the charge transport paths and eight charge transfer channels (R1, R2, R3,..., R8) to change.
(FR) L'invention concerne un élément de conversion photoélectrique capable de réaliser simultanément à la fois une large région de réception de lumière et un transfert à grande vitesse, et un dispositif de capture d'image à semi-conducteur utilisant l'élément de conversion photoélectrique. Cet élément de conversion photoélectrique comprend : une première région de lecture de charge (FD1), une seconde région de lecture de charge (FD2), une troisième région de lecture de charge (FD3).., et une huitième région de lecture de charge (FD8), disposées dans des positions symétriques par rapport à la position du centre d'une région de réception de lumière (PD); et une première électrode de commande de champ électrique (G1), une deuxième électrode de commande de champ électrique (G2), une troisième électrode de commande de champ électrique (G3).., et une huitième électrode de commande de champ électrique (G8), qui sont disposées de chaque côté des trajets de transport de charge menant respectivement de la position du centre de la région de réception de lumière (PD) à la première région de lecture de charge (FD1), la deuxième région de lecture de charge (FD2), la troisième région de lecture de charge (FD3).., et la huitième région de lecture de charge (FD8), et qui provoquent le changement des potentiels d'appauvrissement des trajets de transport de charges et des huit canaux de transfert de charge (R1, R2, R3,..., R8).
(JA) 広い受光領域と高速転送を両立できる光電変換素子及びこの光電変換素子を用いた固体撮像装置を提供する。受光領域(PD)の中心位置に関して対称位置に設けられた第1電荷読出領域(FD1),第2電荷読出領域(FD2),第3電荷読出領域(FD3),……,第8電荷読出領域(FD8)と、受光領域(PD)の中心位置から第1電荷読出領域(FD1),第2電荷読出領域(FD2),第3電荷読出領域(FD3),……,第8電荷読出領域(FD8)のそれぞれに至る電荷輸送路の両側に配置され、電荷輸送路及び8本の電荷転送チャネル(R1,R2,R3,……,R8)の空乏化電位を変化させる第1電界制御電極(G1),第2電界制御電極(G2),第3電界制御電極(G3),……,第8電界制御電極(G8)と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)