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1. (WO2018038133) SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/038133    International Application No.:    PCT/JP2017/030039
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Thu Aug 24 01:59:59 CEST 2017
IPC: H01L 29/78
H01L 29/06
H01L 29/12
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: AKAGI Ai
赤木 愛
HINO Shiro
日野 史郎
SUGAWARA Katsutoshi
菅原 勝俊
SUGAHARA Kazuyuki
須賀原 和之
ITO Masanao
伊藤 正尚
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
First well regions (41) and a second well region (42), both of a second conductivity type, are provided on a drift layer (21) of a first conductivity type. A source region (80) of the first conductivity type is provided on each first well region (41). A field insulating film (31) thicker than a gate insulating film (30) is provided on the second well region (42). An interlayer insulating film (32) has a source contact hole (HS) on each source region (80) and a first well contact hole (HW1) on the second well region (42). A source electrode (10) is connected to each source region (80) through each source contact hole (HS) and to the second well region (42) through the first well contact hole (HW1). An insulator layer (90) thinner than the field insulating film (31) is provided on the second well region (42). A conductor layer (99) has a portion disposed on the second well region (42) with only the insulator layer (90) therebetween.