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1. (WO2018038094) METHOD FOR MANUFACTURING CAPACITOR, METHOD FOR MANUFACTURING SUBSTRATE WITH BUILT-IN CAPACITOR, SUBSTRATE WITH BUILT-IN CAPACITOR, AND SEMICONDUCTOR DEVICE MOUNTING COMPONENT

Pub. No.:    WO/2018/038094    International Application No.:    PCT/JP2017/029906
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Wed Aug 23 01:59:59 CEST 2017
IPC: H05K 1/16
H01G 4/12
H01L 23/12
H05K 3/46
Applicants: MIURA, Shigenobu
三浦 重信
Inventors: MIURA, Shigenobu
三浦 重信
Title: METHOD FOR MANUFACTURING CAPACITOR, METHOD FOR MANUFACTURING SUBSTRATE WITH BUILT-IN CAPACITOR, SUBSTRATE WITH BUILT-IN CAPACITOR, AND SEMICONDUCTOR DEVICE MOUNTING COMPONENT
Abstract:
Provided are: a step (1) for forming a first electrode 3A; a step (2) for forming a high dielectric thin film 5 on the first electrode 3A; a step (3) in which a solder-containing resin composition 6 that contains a resin component and a melting temperature transition-type solder is provided on the high dielectric thin film 5, degassing is performed, and the resin is filled into pinholes in the high dielectric thin film 5; a step (4) in which the melting temperature transition-type solder 6 is allowed to settle and a melting temperature transition-type solder layer 7 is formed on the high dielectric thin film 5; a step (5) for melting the melting temperature transition-type solder layer 7, and prompting the formation of an alloy to yield a conductor layer 8 for which the re-melting temperature is MP; a step (6) in which the resin component is hardened at a temperature lower than the melting temperature MP of the conductor layer 8 to make a resin hardened layer 9; and a step (7) for forming a through hole in the resin hardened layer 9 and exposing the conductor layer, and also forming a second electrode connected to the conductor layer.