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1. (WO2018038067) REFLECTION ELECTRODE AND AL ALLOY SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/038067 International Application No.: PCT/JP2017/029839
Publication Date: 01.03.2018 International Filing Date: 22.08.2017
IPC:
H05B 33/26 (2006.01) ,C23C 14/06 (2006.01) ,C23C 14/14 (2006.01) ,C23C 14/34 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/10 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
26
characterised by the composition or arrangement of the conductive material used as an electrode
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
14
Metallic material, boron or silicon
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants:
株式会社神戸製鋼所 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) [JP/JP]; 兵庫県神戸市中央区脇浜海岸通二丁目2番4号 2-4, Wakinohama-Kaigandori 2-chome, Chuo-ku, Kobe-shi, Hyogo 6518585, JP
Inventors:
田内 裕基 TAUCHI Yuki; --
日野 綾 HINO Aya; --
Agent:
特許業務法人栄光特許事務所 EIKOH PATENT FIRM, P.C.; 東京都港区西新橋一丁目7番13号 虎ノ門イーストビルディング10階 Toranomon East Bldg. 10F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2016-16614826.08.2016JP
Title (EN) REFLECTION ELECTRODE AND AL ALLOY SPUTTERING TARGET
(FR) ÉLECTRODE DE RÉFLEXION ET CIBLE DE PULVÉRISATION EN ALLIAGE D'AL
(JA) 反射電極およびAl合金スパッタリングターゲット
Abstract:
(EN) The purpose of the present invention is to provide, to an element such as an organic EL display or an organic EL illumination, a reflection electrode having a high reflectivity while a driving voltage therefor is sufficiently reduced. The present invention pertains to a reflection electrode which is formed of a transparent conductive film and a reflection film made of an Al alloy and which is characterized in that: a main surface of the reflection film is in contact with a main surface of the transparent conductive film; and the Al alloy contains Zn and a rare earth element such that the ratio of Zn is 3-12 atom% and the ratio of the rare earth element is 0.01-0.5 atom%.
(FR) Le but de la présente invention est de fournir, à un élément tel qu'un affichage électroluminescent organique ou un éclairage électroluminescent organique, une électrode de réflexion ayant une réflectivité élevée pendant qu'une tension de commande associée est suffisamment réduite. La présente invention concerne une électrode de réflexion qui est formée d'un film conducteur transparent et d'un film de réflexion constitué d'un alliage d'Al et qui est caractérisé en ce que : une surface principale du film de réflexion est en contact avec une surface principale du film conducteur transparent ; et l'alliage d'Al contient du Zn et un élément de terres rares de telle sorte que le rapport du Zn est de 3 à 12 % atomique et le rapport de l'élément de terres rares est de 0,01 à 0,5 % atomique.
(JA) 本発明は有機ELディスプレイや有機EL照明等の素子において、その駆動電圧を十分に低減し、高い反射率を有する反射電極を提供することを目的とする。本発明はAl合金からなる反射膜と透明導電膜とからなる反射電極であって、前記反射膜の主面と前記透明導電膜の主面とが接触しており、かつ前記Al合金は、Znを3~12原子%及び希土類元素を0.01~0.5原子%の割合で含有することを特徴とする反射電極に関する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)