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1. (WO2018037907) FILM-FORMING APPARATUS, FILM-FORMING METHOD, AND SOLAR CELL PRODUCTION METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/037907 International Application No.: PCT/JP2017/028711
Publication Date: 01.03.2018 International Filing Date: 08.08.2017
IPC:
C23C 14/34 (2006.01) ,C23C 14/04 (2006.01) ,C23C 14/56 (2006.01) ,H01L 21/203 (2006.01) ,H01L 31/0747 (2012.01) ,H01L 31/18 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04
Coating on selected surface areas, e.g. using masks
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
56
Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0745
comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747
comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
株式会社アルバック ULVAC, INC. [JP/JP]; 神奈川県茅ヶ崎市萩園2500 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543, JP
Inventors:
松崎 淳介 MATSUZAKI Junsuke; JP
高橋 明久 TAKAHASHI Hirohisa; JP
Agent:
阿部 英樹 ABE Hideki; JP
石島 茂男 ISHIJIMA Shigeo; JP
Priority Data:
2016-16444125.08.2016JP
Title (EN) FILM-FORMING APPARATUS, FILM-FORMING METHOD, AND SOLAR CELL PRODUCTION METHOD
(FR) APPAREIL DE FORMATION DE FILM, PROCÉDÉ DE FORMATION DE FILM ET PROCÉDÉ DE PRODUCTION DE CELLULE SOLAIRE
(JA) 成膜装置及び成膜方法並びに太陽電池の製造方法
Abstract:
(EN) The present invention provides technology with which film formation can be performed inexpensively without generating short circuits between the sputtered films formed on the two sides of a substrate on which films are to be formed. In the present invention: a substrate holder 11 is conveyed by a first conveying section so as to pass through a first film-forming region in a substrate holder conveyance mechanism 3; a film is formed by sputtering on a first surface of a substrate 50 on which films are to be formed that is being held on the substrate holder 11; the substrate holder 11 is turned back and conveyed from the first conveying section to a second conveying section while maintaining vertical relationships; the substrate holder 11 is conveyed by a second conveying section in the direction opposite to the conveyance direction of the first conveying section so as to pass through a second film-forming region; and a film is formed by sputtering on the second surface of the substrate 50 on which films are being formed. The substrate holder 11 has openings 14 and 15 that expose the first and second surfaces of the substrates 50 on which films are being formed and is provided with masking parts 16 for shielding the edges of the substrates 50 on which films are being formed from the film-forming material from the second sputtering source.
(FR) La présente invention concerne une technologie grâce à laquelle une formation de film peut être réalisée de manière peu coûteuse sans générer de courts-circuits entre les films déposés par pulvérisation cathodique formés des deux côtés d'un substrat sur lequel des films doivent être formés. Selon la présente invention : un support de substrat (11) est transporté par une première section de transport de façon à passer à travers une première région de formation de film dans un mécanisme de transport de support de substrat (3); un film est formé par pulvérisation cathodique sur une première surface d'un substrat (50) sur lequel des films doivent être formés qui est maintenu sur le support de substrat (11); le support de substrat (11) est retourné et transporté de la première section de transport à une seconde section de transport tout en maintenant des relations verticales; le support de substrat (11) est transporté par une seconde section de transport dans la direction opposée à la direction de transport de la première section de transport de façon à passer à travers une seconde région de formation de film; et un film est formé par pulvérisation cathodique sur la seconde surface du substrat (50) sur lequel des films sont formés. Le support de substrat (11) possède des ouvertures (14) et (15) qui exposent les première et seconde surfaces des substrats (50) sur lesquels des films sont formés et est pourvu de parties de masquage (16) permettant de protéger les bords des substrats (50) sur lesquels des films sont formés à partir du matériau de formation de film à partir de la seconde source de pulvérisation cathodique.
(JA) 本発明は、成膜対象基板の両面側に形成されるスパッタ膜同士の短絡を発生させることなく安価に成膜を行うことができる技術を提供する。本発明では、基板保持器搬送機構3において、第1の搬送部によって基板保持器11を第1の成膜領域を通過するように搬送し、基板保持器11に保持された成膜対象基板50の第1面上にスパッタによって成膜を行い、基板保持器11を上下関係を維持した状態で第1の搬送部から第2の搬送部に向って折り返して搬送し、第2の搬送部によって基板保持器11を第2の成膜領域を通過するように第1の搬送部の搬送方向と反対方向に搬送し、成膜対象基板50の第2面上にスパッタによる成膜を行う。基板保持器11は、成膜対象基板50の第1及び第2面が露出する開口部14、15を有するとともに、成膜対象基板50の縁部に対する第2のスパッタ源からの成膜材料を遮蔽する遮蔽部16が設けられている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)