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1. (WO2018037864) MASK BLANK, PHASE SHIFT MASK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/037864    International Application No.:    PCT/JP2017/028045
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Thu Aug 03 01:59:59 CEST 2017
IPC: G03F 1/32
G03F 1/26
G03F 1/58
H01L 21/3065
Applicants: HOYA CORPORATION
HOYA株式会社
Inventors: IWASHITA, Hiroyuki
岩下 浩之
MATSUMOTO, Atsushi
松本 淳志
NOZAWA, Osamu
野澤 順
Title: MASK BLANK, PHASE SHIFT MASK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
It tends to be difficult to create a phase shift film having a transmittance of 20% or more from a single layer phase shift film made of silicon nitride material; as such, provided is a mask blank including a phase shift film having a transmittance of 20% or more created from two or more sets of laminate structures, each set consisting of a low-permeability layer and a high-permeability layer disposed in order from a translucent substrate side. The mask blank includes the phase shift film disposed on the translucent substrate, the phase shift film having a function for transmitting exposure light from an ArF excimer laser at a transmittance of 20% or more. The phase shift film has two or more sets of laminate structures, each set consisting of a low-permeability layer and a high-permeability layer. The low-permeability layer is made of the silicon nitride material and the high-permeability layer is made of silicon oxide material. The thickness of the high-permeability layer provided at the uppermost level is greater than the thickness of a high-permeability layer provided at a level excluding the upper most level. The thickness of the low-permeability layer is greater than the thickness of a high-permeability layer provided at a level excluding the uppermost level.