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1. (WO2018037863) MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/037863    International Application No.:    PCT/JP2017/028043
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Thu Aug 03 01:59:59 CEST 2017
IPC: G03F 1/50
G03F 1/54
G03F 7/20
Applicants: HOYA CORPORATION
HOYA株式会社
Inventors: SHISHIDO, Hiroaki
宍戸 博明
Title: MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
The purpose of the present invention is to provide a mask blank (100) of which a light-shielding film pattern (2a) has high ArF light resistance, and which solves the problem of detection sensitivity being insufficient when mask detection is performed using long-wavelength light having a wavelength of 800-900 nm. The present invention provides a mask blank having a light-shielding film (2) provided on a transmissive substrate (1), wherein the mask blank is characterized in that the light-shielding film is a single-layer film formed from a material containing silicon and nitrogen, the optical density of an ArF excimer laser relative to exposed light is 2.5 or greater, the obverse-surface reflectance is 40% or less, the reverse-surface reflectance is 40% or less, the transmittance with respect to light having a wavelength of 900 nm is 50% or less, the extinction coefficient is 0.04 or greater, and the thickness is 60 nm or less.