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1. (WO2018037799) PLASMA ETCHING METHOD
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Pub. No.: WO/2018/037799 International Application No.: PCT/JP2017/026553
Publication Date: 01.03.2018 International Filing Date: 21.07.2017
IPC:
H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
日本ゼオン株式会社 ZEON CORPORATION [JP/JP]; 東京都千代田区丸の内一丁目6番2号 6-2, Marunouchi 1-chome, Chiyoda-ku Tokyo 1008246, JP
Inventors:
櫻井 隆覚 SAKURAI Takaaki; JP
乾 裕俊 INUI Hirotoshi; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
2016-16500925.08.2016JP
Title (EN) PLASMA ETCHING METHOD
(FR) PROCÉDÉ DE GRAVURE AU PLASMA
(JA) プラズマエッチング方法
Abstract:
(EN) The present invention provides a plasma etching method for etching a multilayer laminate made by laminating a silicon oxide film and a silicon nitride film, the plasma etching method including an etching step in which a gas of a bromine-containing fluorocarbon compound represented by compositional formula C3H2BrF3 and a gas of a fluorocarbon that does not contain bromine are used together, and plasma etching is performed on the silicon oxide film and the silicon nitride film.
(FR) La présente invention concerne un procédé de gravure par plasma pour graver un stratifié multicouche obtenu par stratification d'un film d'oxyde de silicium et d'un film de nitrure de silicium, le procédé de gravure au plasma comprenant une étape de gravure dans laquelle un gaz d'un composé de fluorocarbone contenant du brome représenté par la formule de composition C3H2BrF3 et un gaz d'un fluorocarbone qui ne contient pas de brome sont utilisés ensemble, et une gravure au plasma est effectuée sur le film d'oxyde de silicium et le film de nitrure de silicium.
(JA) シリコン酸化膜及びシリコン窒化膜が積層されてなる多層積層体をエッチングするプラズマエッチング方法であって、組成式C32BrF3で表されうる臭素含有フルオロカーボン化合物のガス、並びに、臭素非含有フルオロカーボンのガスを併用して、シリコン酸化膜及びシリコン窒化膜をプラズマエッチングするエッチング工程を含む、プラズマエッチング方法である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)