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1. (WO2018037769) SEMICONDUCTOR DEVICE
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Pub. No.:
WO/2018/037769
International Application No.:
PCT/JP2017/025872
Publication Date:
01.03.2018
International Filing Date:
18.07.2017
IPC:
G01R 19/00
(2006.01)
G
PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
19
Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Applicants:
株式会社デンソー DENSO CORPORATION
[JP/JP]; 愛知県刈谷市昭和町1丁目1番地 1-1, Showa-cho, Kariya-city Aichi 4488661, JP
Inventors:
赤間 貞洋 AKAMA Sadahiro
; JP
小野 秀和 ONO Hidekazu
; JP
Agent:
金 順姫 JIN Shunji
; JP
Priority Data:
2016-164999
25.08.2016
JP
Title
(EN)
SEMICONDUCTOR DEVICE
(FR)
DISPOSITIF À SEMI-CONDUCTEUR
(JA)
半導体装置
Abstract:
(EN)
This semiconductor device comprises a main switching element (Mtr) and a sense switching element (Str) which is current mirror-connected to the main switching element and through which a sense current flows. The main switching element has a first terminal (T1) and a second terminal (T2) as output terminals, and the sense switching element has a third terminal (T3) connected to the first terminal, and a fourth terminal (T4) through which the sense current flows. The semiconductor device further comprises a sense resistor (23) for detecting the electric potential of the fourth terminal, and an operational amplifier (OP1, OP2, OP3, OP4), the input terminals of which are connected to the second terminal and the fourth terminal. The operational amplifier is configured such that the output thereof feeds back to the input terminals, and this feedback path includes the sense resistor. A higher voltage (VH) can be supplied to the operational amplifier than to the first terminal so that the direction of the sense current flowing to the sense resistor can be switched.
(FR)
L'invention concerne un dispositif à semi-conducteur qui comprend un élément de commutation principal (Mtr) et un élément de commutation de détection (Str) qui est connecté en miroir de courant à l'élément de commutation principal et à travers lequel circule un courant de détection. L'élément de commutation principal possède une première borne (T1) et une deuxième borne (T2) en tant que bornes de sortie, et l'élément de commutation de détection possède une troisième borne (T3) connectée à la première borne, et une quatrième borne (T4) à travers laquelle circule le courant de détection. Le dispositif à semi-conducteur comprend en outre une résistance de détection (23) servant à détecter le potentiel électrique de la quatrième borne, et un amplificateur opérationnel (OP1, OP2, OP3, OP4) dont les bornes d'entrée sont reliées à la deuxième borne et à la quatrième borne. L'amplificateur opérationnel est configuré de sorte que sa sortie renvoie aux bornes d'entrée, et ce trajet de rétroaction comprend la résistance de détection. Une tension relativement élevée (VH) par rapport à la première borne peut être fournie à l'amplificateur opérationnel, de sorte que la direction du courant de détection circulant vers la résistance de détection peut être commutée.
(JA)
半導体装置は、メインスイッチング素子(Mtr)と、メインスイッチング素子にカレントミラー接続されてセンス電流が流れるセンススイッチング素子(Str)を備える。メインスイッチング素子は、出力端子として第1端子(T1)と第2端子(T2)を有し、センススイッチング素子は、第1端子に接続される第3端子(T3)と、センス電流が流れる第4端子(T4)とを有する。また、半導体装置は、第4端子の電位を検出するためのセンス抵抗(23)と、第2端子および第4端子がそれぞれ入力端子に接続されるオペアンプ(OP1,OP2,OP3,OP4)を備える。オペアンプは、その出力が入力端子にフィードバックするように構成されつつ、そのフィードバック経路にセンス抵抗を含むようにされる。オペアンプには、第1端子よりも高い電圧(VH)が供給可能にされており、センス抵抗に流れるセンス電流の方向が切り替え可能にされる。
Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language:
Japanese (
JA
)
Filing Language:
Japanese (
JA
)