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1. (WO2018037746) CONDUCTIVE PASTE AND SOLAR CELL
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Pub. No.: WO/2018/037746 International Application No.: PCT/JP2017/025339
Publication Date: 01.03.2018 International Filing Date: 12.07.2017
IPC:
H01L 31/0224 (2006.01) ,H01B 1/22 (2006.01) ,H01L 21/288 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
20
Conductive material dispersed in non-conductive organic material
22
the conductive material comprising metals or alloys
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
288
from a liquid, e.g. electrolytic deposition
Applicants:
ナミックス株式会社 NAMICS CORPORATION [JP/JP]; 新潟県新潟市北区濁川3993番地 3993, Nigorikawa, Kita-ku, Niigata-shi, Niigata 9503131, JP
Inventors:
今野 聖也 KONNO Seiya; JP
坂井 徳幸 SAKAI Noriyuki; JP
Agent:
特許業務法人 津国 TSUKUNI & ASSOCIATES; 東京都千代田区麹町5-3-1 麹町ビジネスセンター Kojimachi Business Center, 5-3-1, Kojimachi, Chiyoda-ku, Tokyo 1020083, JP
山村 大介 YAMAMURA Daisuke; JP
Priority Data:
2016-16291523.08.2016JP
Title (EN) CONDUCTIVE PASTE AND SOLAR CELL
(FR) PÂTE CONDUCTRICE ET CELLULE SOLAIRE
(JA) 導電性ペースト及び太陽電池
Abstract:
(EN) Provided is a conductive paste for forming bus bar electrodes (20a, 15a) on passivation films (2, 14) of a crystalline silicon solar cell without having adverse effects, which affect the characteristics of the solar cell, on the passivation films (2, 14), said bus bar electrodes (20a, 15a) exhibiting high adhesive strength with respect to the passivation films (2, 14). A conductive paste which is formed on passivation films (2, 14) of a solar cell, and which contains (A) silver particles, (B) an organic vehicle and (C) a glass frit that contains 1.0-20 mol% of TeO2 and 10-30 mol% of Bi2O3.
(FR) La présente invention concerne une pâte conductrice permettant de former des électrodes de barre omnibus (20a, 15a) sur des films de passivation (2, 14) d'une cellule solaire en silicium cristallin sans avoir d'effets indésirables, qui affectent les caractéristiques de la cellule solaire, sur les films de passivation (2, 14), lesdites électrodes de barre omnibus (20a, 15a) présentant une force d'adhérence élevée par rapport aux films de passivation (2, 14). Une pâte conductrice qui est formée sur des films de passivation (2, 14) d'une cellule solaire, contient (A) des particules d'argent, (B) un véhicule organique et (C) une fritte de verre qui contient de 1,0 à 20 % en moles de TeO2 et de 10 à 30 % en moles de Bi2O3.
(JA) 結晶系シリコン太陽電池において、パッシベーション膜に対して太陽電池特性に影響を与えるような悪影響を及ぼさずに、パッシベーション膜に対して高い接着強度を有するバスバー電極を形成するための、導電性ペーストを提供する。 太陽電池セルのパッシベーション膜上に形成される導電性ペーストであって、(A)銀粒子と、(B)有機ビヒルクと、(C)TeOを1.0~20mol%、及びBiを10~30mol%含むガラスフリットとを含む、導電性ペーストである。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)