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1. (WO2018037736) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/037736    International Application No.:    PCT/JP2017/024954
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Sat Jul 08 01:59:59 CEST 2017
IPC: H01L 21/3205
H01L 21/60
H01L 21/768
H01L 23/522
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: SUZUKI Hiroyoshi
鈴木 裕彌
OKABE Hiroaki
岡部 博明
Title: SEMICONDUCTOR DEVICE
Abstract:
The purpose of the present invention is to inhibit cracking in an interlayer insulation film caused by growth of Cu crystal grains. A semiconductor device (101) is provided with: a source region (5); an interlayer insulation film (7) formed on the source region (5) so as to be provided with an opening, the interlayer insulation film (7) comprising silicon oxide; a Cu electrode (1) electrically connected to the source region (5) through the opening in the interlayer insulation film (7), an end part of the Cu electrode (1) being positioned on the interlayer insulation film (7) on the inside of an end part of the interlayer insulation film (7); and a stress relaxation layer (13) formed between the Cu electrode (1) and the interlayer insulation film (7) and provided from the inside to the outside of the end part of the Cu electrode (1), the stress relaxation layer (13) comprising a material having a higher fracture toughness value than the interlayer insulation film (7).