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1. (WO2018037720) POWER CONVERSION DEVICE
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Pub. No.: WO/2018/037720 International Application No.: PCT/JP2017/024427
Publication Date: 01.03.2018 International Filing Date: 04.07.2017
IPC:
H02M 7/48 (2007.01) ,H02M 1/08 (2006.01) ,H03K 17/16 (2006.01) ,H03K 17/56 (2006.01)
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1
Details of apparatus for conversion
08
Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
16
Modifications for eliminating interference voltages or currents
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
Applicants:
日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
Inventors:
平尾 高志 HIRAO Takashi; JP
坂野 順一 SAKANO Junichi; JP
徳山 健 TOKUYAMA Takeshi; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
2016-16480225.08.2016JP
Title (EN) POWER CONVERSION DEVICE
(FR) DISPOSITIF DE CONVERSION D’ÉLECTRICITÉ
(JA) 電力変換装置
Abstract:
(EN) When a large main current is interrupted, there is a risk that an excessive surge voltage could be applied to a main terminal of a power semiconductor component. In the present invention, a third switching component 113 is turned on in response to a control signal from a control circuit 150, the control signal being generated when a signal is received from an overcurrent detection circuit 108 when the overcurrent detection circuit 108 has detected that a main current flowing in an IGBT 101 is an overcurrent. In this case, however, the control signal from the control circuit 150 is not input to a second switching component 112, and the second switching component 112 is in an off state. When the third switching component 113 is turned on, a gate capacitor 103 of the IGBT 101 is discharged via a saturation current circuit 114 at a slower speed than when the second switching component 112 is turned on.
(FR) Lorsqu’un courant principal élevé est interrompu, il existe un risque qu’une surtension excessive soit appliquée à une borne principale d’un composant à semi-conducteur d’alimentation. Dans la présente invention, un troisième composant de commutation 113 est activé en réponse à un signal de commande provenant d’un circuit de commande 150, le signal de commande étant généré lorsqu’un signal est reçu depuis un circuit de détection de surintensité 108 lorsque le circuit de détection de surintensité 108 a détecté qu’un courant principal circulant dans un IGBT 101 est une surintensité. Dans ce cas, cependant, le signal de commande provenant du circuit de commande 150 n’est pas entré dans un deuxième composant de commutation 112, et le deuxième composant de commutation 112 est dans un état désactivé. Lorsque le troisième composant de commutation 113 est activé, un condensateur de grille 103 de l’IGBT 101 est déchargé par l’intermédiaire d’un circuit de courant de saturation 114 à une vitesse plus lente que lorsque le deuxième composant de commutation 112 est activé.
(JA) 大きな主電流を遮断するときに、パワー半導体素子の主端子に過度なサージ電圧が発生する虞がある。 第3スイッチング素子113は、過電流検出回路108によりIGBT101に流れる主電流が過電流であることが検知され、過電流検出回路108からの信号を受けた制御回路150からの制御信号によりオンする。なお、この場合、第2スイッチング素子112には、制御回路150からの制御信号は入力されず、第2スイッチング素子112はオフしている。第3スイッチング素子113がオンしたときに、飽和電流回路114を介してIGBT101のゲート容量103は第2スイッチング素子112がオンする場合よりも遅い速度で放電される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)