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1. (WO2018037701) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/037701    International Application No.:    PCT/JP2017/023349
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Tue Jun 27 01:59:59 CEST 2017
IPC: H01L 29/78
H01L 29/06
H01L 29/12
H01L 29/47
H01L 29/872
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: NAKAO Yukiyasu
中尾 之泰
EBIHARA Kohei
海老原 洪平
HINO Shiro
日野 史郎
Title: SEMICONDUCTOR DEVICE
Abstract:
The objective of the invention is to provide a technique capable of suppressing damage to a gate insulation film. This semiconductor device comprises: a plurality of semiconductor switching elements, each being a MOSFET and having a Schottky barrier diode integrated therein; a first ohmic electrode arranged above a first region on the reverse side of a well region from a predetermined region and electrically connected to the first region; a first Schottky electrode arranged on a semiconductor layer exposed in the first region of the well region; and wiring electrically connected to the first ohmic electrode and the first Schottky electrode, while also being electrically connected to a source electrode.