Search International and National Patent Collections
|1. (WO2018037701) SEMICONDUCTOR DEVICE|
|Applicants:||MITSUBISHI ELECTRIC CORPORATION
The objective of the invention is to provide a technique capable of suppressing damage to a gate insulation film. This semiconductor device comprises: a plurality of semiconductor switching elements, each being a MOSFET and having a Schottky barrier diode integrated therein; a first ohmic electrode arranged above a first region on the reverse side of a well region from a predetermined region and electrically connected to the first region; a first Schottky electrode arranged on a semiconductor layer exposed in the first region of the well region; and wiring electrically connected to the first ohmic electrode and the first Schottky electrode, while also being electrically connected to a source electrode.