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1. (WO2018037679) LIGHT EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/037679 International Application No.: PCT/JP2017/021821
Publication Date: 01.03.2018 International Filing Date: 13.06.2017
IPC:
H01S 5/183 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
Applicants: SONY CORPORATION[JP/JP]; 1-7-1, Konan, Minato-ku, Tokyo 1080075, JP
Inventors: HAMAGUCHI Tatsushi; JP
IZUMI Shoichiro; JP
SATO Susumu; JP
FUTAGAWA Noriyuki; JP
Agent: YAMAMOTO Takahisa; JP
YOSHII Masaaki; JP
Priority Data:
2016-16333724.08.2016JP
Title (EN) LIGHT EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT
(JA) 発光素子
Abstract:
(EN) This light emitting element is provided with a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, and inside of the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.
(FR) La présente invention concerne un élément électroluminescent pourvu d'une structure stratifiée formée par stratification d'une première couche réfléchissant la lumière 41, d'une structure électroluminescente 20, et d'une seconde couche réfléchissant la lumière 42. La structure électroluminescente 20 est formée par stratification, à partir du premier côté de couche réfléchissant la lumière, d'une première couche semi-conductrice composée 21, d'une couche active 23, et d'une seconde couche semi-conductrice composée 22, et à l'intérieur de la structure stratifiée 20, au moins deux couches de matériau d'absorption de lumière 51 sont formées en parallèle à un plan virtuel occupé par la couche active 23.
(JA) 発光素子は、第1光反射層41、発光構造体20及び第2光反射層42が積層されて成る積層構造体を備えており、発光構造体20は、第1光反射層側から、第1化合物半導体層21、活性層23及び第2化合物半導体層22が積層されて成り、積層構造体20の内部には、活性層23が占める仮想平面と平行に、少なくとも2層の光吸収材料層51が形成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)