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1. (WO2018037450) OPTICAL DEVICE AND METHOD FOR MANUFACTURING OPTICAL DEVICE
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Pub. No.: WO/2018/037450 International Application No.: PCT/JP2016/074369
Publication Date: 01.03.2018 International Filing Date: 22.08.2016
IPC:
H01S 5/32 (2006.01) ,H01S 5/026 (2006.01) ,H01S 5/20 (2006.01) ,H01S 5/323 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
32
comprising PN junctions, e.g. hetero- or double- hetero-structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
32
comprising PN junctions, e.g. hetero- or double- hetero-structures
323
in AIIIBV compounds, e.g. AlGaAs-laser
Applicants:
富士通株式会社 FUJITSU LIMITED [JP/JP]; 神奈川県川崎市中原区上小田中4丁目1番1号 1-1, Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-shi, Kanagawa 2118588, JP
Inventors:
倉橋 輝雄 KURAHASHI, Teruo; JP
河口 研一 KAWAGUCHI, Kenichi; JP
Agent:
伊東 忠重 ITOH, Tadashige; JP
伊東 忠彦 ITOH, Tadahiko; JP
Priority Data:
Title (EN) OPTICAL DEVICE AND METHOD FOR MANUFACTURING OPTICAL DEVICE
(FR) DISPOSITIF OPTIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 光デバイス及び光デバイスの製造方法
Abstract:
(EN) Disclosed is an optical device that has: a lower cladding layer formed of an amorphous insulating material on a substrate; a first cladding region formed of a compound semiconductor single crystal, an active region, and a second cladding region, which are formed on the lower cladding layer; an upper cladding layer formed of an insulating material on the active region; a first electrode connected to the first cladding region; and a second electrode connected to the second cladding region. The first cladding region, the active region, and the second cladding region are formed parallel to the surface of the substrate.
(FR) L'invention concerne un dispositif optique qui comprend : une couche de gainage inférieure formée d'un matériau isolant amorphe sur un substrat; une première région de gainage formée d'un monocristal de composé semi-conducteur , une région active et une seconde région de gainage, qui sont formées sur la couche de gainage inférieure; une couche de gainage supérieure formée d'un matériau isolant sur la région active; une première électrode connectée à la première région de gainage; et une seconde électrode connectée à la seconde région de gainage. La première région de gainage, la région active et la seconde région de gainage sont formées parallèlement à la surface du substrat.
(JA) 基板の上にアモルファスの絶縁体により形成された下部クラッド層と、前記下部クラッド層の上に化合物半導体の単結晶により形成された第1のクラッド領域、活性領域及び第2のクラッド領域と、前記活性領域の上に絶縁体により形成された上部クラッド層と、前記第1のクラッド領域に接続された第1の電極と、前記第2のクラッド領域に接続された第2の電極と、を有し、前記第1のクラッド領域、前記活性領域及び前記第2のクラッド領域は、前記基板の面に平行に形成されている光デバイス。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)