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1. (WO2018037189) PROCESS FOR PRODUCING A STRAINED LAYER BASED ON GERMANIUM-TIN

Pub. No.:    WO/2018/037189    International Application No.:    PCT/FR2017/052261
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Thu Aug 24 01:59:59 CEST 2017
IPC: H01L 21/20
Applicants: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
Inventors: REBOUD, Vincent
HARTMANN, Jean-Michel
TCHELNOKOV, Alexei
Title: PROCESS FOR PRODUCING A STRAINED LAYER BASED ON GERMANIUM-TIN
Abstract:
The invention pertains to a process for producing a strained layer (12) based on germanium-tin (GeSn), including the following steps: producing a semiconductor stack (10), including a layer based on germanium-tin (GeSn) and having an initial strain value that is non-zero; structuring said semiconductor stack (10) so as to form: o a structured portion (20) and a peripheral portion (30), the structured portion (20) including a central section (21) that is linked to the peripheral portion (30) by at least two lateral sections (22), o the lateral sections (22) having an average width (b) that is greater than an average width (a) of the central section (21); suspending the structured portion (20), the central section (21) then having a final strain value that is higher than the initial value.