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1. (WO2018036951) METHOD FOR DIRECTLY DEPOSITING PALLADIUM ONTO A NON-ACTIVATED SURFACE OF A GALLIUM NITRIDE SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/036951    International Application No.:    PCT/EP2017/071003
Publication Date: 01.03.2018 International Filing Date: 21.08.2017
IPC:
C23C 18/16 (2006.01), C23C 18/44 (2006.01), H01L 29/872 (2006.01), H01L 33/00 (2010.01), H01L 33/32 (2010.01)
Applicants: ATOTECH DEUTSCHLAND GMBH [DE/DE]; Erasmusstraße 20 10553 Berlin (DE)
Inventors: WALTER, Andreas; (DE)
Agent: SCHULZ, Hendrik; (DE)
Priority Data:
16185352.8 23.08.2016 EP
Title (EN) METHOD FOR DIRECTLY DEPOSITING PALLADIUM ONTO A NON-ACTIVATED SURFACE OF A GALLIUM NITRIDE SEMICONDUCTOR
(FR) PROCÉDÉ DE DÉPÔT DIRECT DE PALLADIUM SUR UNE SURFACE NON ACTIVÉE D'UN SEMI-CONDUCTEUR AU NITRURE DE GALLIUM
Abstract: front page image
(EN)The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.
(FR)La présente invention concerne un procédé de dépôt direct de palladium sur une surface non activée d'un semi-conducteur au nitrure de gallium, l'utilisation d'un bain de placage au palladium acide (tel que défini ci-dessous) pour le dépôt direct de palladium métallique ou d'un alliage de palladium sur une surface non activée d'un semi-conducteur au nitrure de gallium dopé ou non dopé, et un semi-conducteur au nitrure de gallium dopé ou non dopé, revêtu de palladium ou d'alliage de palladium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)