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1. (WO2018036193) PEROVSKITE THIN FILM LOW-PRESSURE CHEMICAL DEPOSITION EQUIPMENT AND USING METHOD THEREOF, AND APPLICATION

Pub. No.:    WO/2018/036193    International Application No.:    PCT/CN2017/082794
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Thu May 04 01:59:59 CEST 2017
IPC: C23C 16/455
C23C 16/52
C23C 16/40
Applicants: HANGZHOU MICROQUANTA SEMICONDUCTOR CO., LTD
杭州纤纳光电科技有限公司
Inventors: YAO, Jizhong
姚冀众
YAN, Buyi
颜步一
Title: PEROVSKITE THIN FILM LOW-PRESSURE CHEMICAL DEPOSITION EQUIPMENT AND USING METHOD THEREOF, AND APPLICATION
Abstract:
A perovskite thin film low-pressure chemical deposition equipment and a using method thereof, and an application. The equipment comprises a main cavity (26). Two precursor heating stages (9) and (13) and a substrate fixing groove (10) are provided in the main cavity (26). Precursor storage boxes (8) and (12) are provided on the precursor heating stages (9) and (13) respectively. A plurality of substrates (11) to be deposited with a thin film is placed on the substrate fixing groove (10). Each group of substrates (11) comprises two substrates (11) closely placed back to back. The surfaces of the two substrates (11) to be deposited with a thin film each face one end of the main cavity (26). The left and right ends of the main cavity (26) are respectively in communication with carrier gas pipelines having carrier gas intake control valves (1) and (22). The main cavity (26) is also in communication with a vacuuming device. A main cavity heating device for heating the substrates (11) is also provided on the main cavity (26). The carrier gas pipelines at both ends are in communication with solvent evaporation devices respectively. Gas enters from both ends of the main cavity and the substrates are arranged back to back, so that the speed of preparing a perovskite thin film using the method is doubled compared with that of the existing method.