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1. (WO2018036192) PEROVSKITE THIN FILM FORMING METHOD AND FORMING EQUIPMENT, METHOD OF USING FORMING EQUIPMENT, AND APPLICATION

Pub. No.:    WO/2018/036192    International Application No.:    PCT/CN2017/082793
Publication Date: Fri Mar 02 00:59:59 CET 2018 International Filing Date: Thu May 04 01:59:59 CEST 2017
IPC: C23C 16/458
C23C 16/56
Applicants: HANGZHOU MICROQUANTA SEMICONDUCTOR CO., LTD
杭州纤纳光电科技有限公司
Inventors: YAO, Jizhong
姚冀众
YAN, Buyi
颜步一
Title: PEROVSKITE THIN FILM FORMING METHOD AND FORMING EQUIPMENT, METHOD OF USING FORMING EQUIPMENT, AND APPLICATION
Abstract:
A perovskite thin film forming method and forming equipment, a method of using the forming equipment, and an application of the using method. The forming method uses a tubular cavity (2). A substrate feeding section (M1) and a substrate unloading section (M5) are provided at the front and back of the tubular cavity (2) respectively. The tubular cavity (2) is provided with a plurality of deposition cavities (M2) and/or transition cavities (M3) and/or annealing cavities (M4). Object stages (7, 19), air pressure regulation devices (1, 18), and heating devices (8, 16) are provided in the deposition cavity (M2) and the annealing cavity (M4) respectively. The heating devices (8, 16) heat reactants in the object stages (7, 19). The reactants are heated to evaporate and then gas particles are deposited on the surfaces of substrates (9) in the cavity. Adjacent section and cavity and adjacent cavities are separated by separator plates (4, 12, 15, 20). The forming method comprises the following steps: placing on a substrate support (24) the substrates (9) to be deposited with a thin film; and by using transmission devices (3, 10, 11, 14, 22) provided in the tubular cavity (2), enabling the substrates (9) to continuously pass through the plurality of deposition cavities (M2), transition cavities (M3), and annealing cavities (M4) in sequence starting from the substrate feeding section (M1), and finally unloading the substrates (9) deposited with the perovskite thin film from the substrate support (24) of the substrate unloading section (M5).