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1. (WO2018036190) THIN FILM TRANSISTOR, METHOD FOR DETECTING PRESSURE USING SAME, AND TOUCH DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/036190    International Application No.:    PCT/CN2017/082326
Publication Date: 01.03.2018 International Filing Date: 28.04.2017
IPC:
H01L 29/786 (2006.01), H01L 29/423 (2006.01), G06F 3/041 (2006.01)
Applicants: BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015 (CN).
BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; No.118 Jinghaiyilu, BDA Beijing 100176 (CN)
Inventors: ZHANG, Bin; (CN).
WANG, Guangxing; (CN).
CHEN, Pengming; (CN).
XIE, Yu; (CN).
ZHANG, Kan; (CN)
Agent: LIU, SHEN & ASSOCIATES; 10th Floor, Building 1, 10 Caihefang Road, Haidian District Beijing 100080 (CN)
Priority Data:
201610742811.8 26.08.2016 CN
Title (EN) THIN FILM TRANSISTOR, METHOD FOR DETECTING PRESSURE USING SAME, AND TOUCH DEVICE
(FR) TRANSISTOR À COUCHE MINCE, PROCÉDÉ DE DÉTECTION DE PRESSION L'UTILISANT, ET DISPOSITIF TACTILE
(ZH) 薄膜晶体管和利用其检测压力的方法、以及触控装置
Abstract: front page image
(EN)A thin film transistor, a method for detecting pressure using same, and a touch device. A thin film transistor (100) comprises: an active layer (40); a source (51) and a drain (52) which are spaced apart from each other and connected to the active layer (40); a first insulating layer (60), the first insulating layer (60) and the active layer (40) being stacked; and a piezoelectric layer (70) which is spaced apart from the source (51) and the drain (52) and is spaced apart from the active layer (40) by means of the first insulating layer (60).
(FR)L'invention concerne un transistor à couche mince, un procédé de détection de pression l'utilisant, et un dispositif tactile. Un transistor à couche mince (100) comprend : une couche active (40); une source (51) et un drain (52) qui sont espacées l'une de l'autre et reliées à la couche active (40); une première couche isolante (60), la première couche isolante (60) et la couche active (40) étant empilées; et une couche piézoélectrique (70) qui est espacée de la source (51) et le drain (52) et est espacée de la couche active (40) au moyen de la première couche isolante (60).
(ZH)一种薄膜晶体管和利用其检测压力的方法、以及触控装置。薄膜晶体管(100)包括:有源层(40);源极(51)和漏极(52),其彼此间隔开并且都与所述有源层(40)连接;第一绝缘层(60),其与所述有源层(40)层叠设置;以及压电层(70),其与所述源极(51)和所述漏极(52)间隔开并且通过所述第一绝缘层(60)与所述有源层(40)间隔开。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)