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1. (WO2018035688) MULTI-LAYERED GRAPHENE QUANTUM CARBON-BASED SEMICONDUCTOR MATERIAL MANUFACTURED USING PI MEMBRANE AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2018/035688 International Application No.: PCT/CN2016/096271
Publication Date: 01.03.2018 International Filing Date: 22.08.2016
IPC:
H01L 29/12 (2006.01) ,H01L 29/16 (2006.01) ,H01L 29/167 (2006.01) ,H01L 21/324 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
16
including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
16
including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form
167
further characterised by the doping material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants: SHENZHEN DANBOND TECHNOLOGY CO., LTD[CN/CN]; No.8, Langshan Road 1, Hi-tech Industrial Park North, Nanshan District Shenzhen, Guangdong 518057, CN
Inventors: LIU, Ping; CN
Agent: CHINA TRUER IP; 10A3, Jiangxi Shiji Haoting Building (Jiangxi Building), Shennan Road South, Chegong Miao, Futian District Shenzhen, Guangdong 518040, CN
Priority Data:
Title (EN) MULTI-LAYERED GRAPHENE QUANTUM CARBON-BASED SEMICONDUCTOR MATERIAL MANUFACTURED USING PI MEMBRANE AND MANUFACTURING METHOD THEREOF
(FR) MATÉRIAU SEMI-CONDUCTEUR À BASE DE CARBONE QUANTIQUE DE GRAPHÈNE MULTICOUCHE FABRIQUÉ À L'AIDE D'UNE MEMBRANE PI ET SON PROCÉDÉ DE FABRICATION
(ZH) PI膜制备的多层石墨烯量子碳基半导体材料及其制备方法
Abstract:
(EN) Provided are a multi-layered graphene quantum carbon-based semiconductor material manufactured using a PI membrane, and a manufacturing method thereof. The manufacturing method comprises: S1. performing high-molecular weight sintering, using a PI membrane as the raw material, at a first temperature to remove H, O, and N atoms and form a carbon precursor; and S2. adjusting to a second temperature to perform graphitization on the carbon precursor to form a multi-layered graphene quantum carbon-based two-dimensional semiconductor material. Doping with a nanometallic material is carried out at least in step S2 to form quantum dots in the multi-layered graphene. The multi-layered graphene quantum carbon-based two-dimensional semiconductor material manufactured using the method has a molecular structure featuring a flat, hexagonal mesh. The structure has an orderly arrangement, is flexible, has a large tortuosity ratio, and extremely small intrafacial dispersion and offset. A bandgap can be formed by using nanometal doping. The bandgap can also be controlled. The manufacturing method can achieve large area, low cost, large batch, and continuous reel-to-reel production.
(FR) L'invention concerne un matériau semi-conducteur à base de carbone quantique de graphène multicouche fabriqué à l'aide d'une membrane PI, et son procédé de fabrication. Le procédé de fabrication comprend : S1. La réalisation d'un frittage de poids moléculaire élevé, à l'aide d'une membrane PI en tant que matière première, à une première température pour éliminer les atomes H, O et N et former un précurseur de carbone; et S2. L'ajustement à une seconde température pour effectuer une graphitisation sur le précurseur de carbone pour former un matériau semi-conducteur bidimensionnel à base de carbone quantique de graphène multicouche. Le dopage avec un matériau nano métallique est réalisé au moins dans l'étape S2 pour former des points quantiques dans le graphène multicouche. Le matériau semi-conducteur bidimensionnel à base de carbone quantique de graphène multicouche fabriqué à l'aide du procédé présente une structure moléculaire présentant un maillage hexagonal plat. La structure a un agencement ordonné, est flexible, a un grand rapport de tortuosité, et une dispersion intrafaciale extrêmement petite et un décalage. Une bande interdite peut être formée en utilisant un dopage de nanométal. La bande interdite peut également être commandée. Le procédé de fabrication permet d'obtenir une grande surface, un faible coût, un grand lot, et une production continue de bobine à bobine.
(ZH) 提供一种多层石墨烯量子碳基二维半导体材料及其制备方法,制备方法包括:S1.以PI膜为原料,在第一温度下进行高分子烧结,脱除H、O、N原子,形成碳素前驱体;S2.调整至第二温度,所述碳素前驱体进行石墨化,形成多层石墨烯量子碳基二维半导体材料;其中,至少在所述步骤S2中,进行纳米金属材料的掺杂,以在所述多层石墨烯中形成量子点。经该方法制备的多层石墨烯量子碳基二维半导体材料为六角平面网分子结构,且有序排列,具备柔性,曲折率大、面内分散度和偏差度非常小;通过纳米金属的掺杂形成带隙,且带隙可控;该制备方法能够大面积、低成本、大批量、卷到卷连续生产。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)