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1. (WO2018035668) MICRO-LED TRANSFER METHOD, MANUFACTURING METHOD AND DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2018/035668 International Application No.: PCT/CN2016/096197
Publication Date: 01.03.2018 International Filing Date: 22.08.2016
IPC:
H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
GOERTEK.INC [CN/CN]; 268 Dongfang Road Hi-Tech Industry District Weifang, Shandong 261031, CN
Inventors:
ZOU, Quanbo; CN
CHEN, Peixuan; CN
FENG, Xiangxu; CN
Agent:
BEYOND TALENT PATENT AGENT FIRM; Room 1202, Kuntai Building #10 Chaoyangmenwai Str., Chaoyang District Beijing 100020, CN
Priority Data:
Title (EN) MICRO-LED TRANSFER METHOD, MANUFACTURING METHOD AND DEVICE
(FR) PROCÉDÉ DE TRANSFERT DE MICRO-DEL, PROCÉDÉ DE FABRICATION ET DISPOSITIF
Abstract:
(EN) The present invention discloses a micro-LED transfer method, manufacturing method and device. The micro-LED transfer method comprises: obtaining a laser-transparent carrier substrate (301) having a first surface and a second surface with micro-LEDs(303); forming a protection layer (308) on at least one of the first surface and the second surface and a third surface of a receiving substrate (302), wherein the third surface is to receive the micro-LEDs (303) to be transferred via pads(304); bringing the micro-LEDs (303) to be transferred into contact with the pads (304) on the third surface; and irradiating the micro-LEDs (303) to be transferred with laser (307) from the first surface to lift-off the micro-LEDs (303) to be transferred from the carrier substrate (301), wherein the protection layer (308) is configured to protect the third surface from the irradiation of the laser (307).
(FR) La présente invention concerne un procédé de transfert de micro-DEL, un procédé de fabrication et un dispositif. Le procédé de transfert de micro-DEL consiste à : obtenir un substrat de support transparent au laser (301) ayant une première surface et une seconde surface avec des micro-DEL (303); formant une couche de protection (308) la première surface et/ou la deuxième surface et une troisième surface d'un substrat de réception (302), la troisième surface étant destinée à recevoir les micro-LED (303) devant être transférées par l'intermédiaire de plots (304); amener les micro-DEL (303) à être transférées en contact avec les plots (304) sur la troisième surface; et irradier les micro-DEL (303) à transférer au laser (307) à partir de la première surface pour soulever les micro-DEL (303) à transférer à partir du substrat de support (301), la couche de protection (308) étant conçue pour protéger la troisième surface de l'irradiation du laser (307).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)