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1. (WO2018034812) DILUTE NITRIDE DEVICES WITH ACTIVE GROUP IV SUBSTRATE AND CONTROLLED DOPANT DIFFUSION AT THE NUCLEATION LAYER-SUBSTRATE INTERFACE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/034812    International Application No.:    PCT/US2017/043965
Publication Date: 22.02.2018 International Filing Date: 26.07.2017
IPC:
H01L 21/02 (2006.01), H01L 31/0304 (2006.01), H01L 31/0725 (2012.01), H01L 31/0687 (2012.01)
Applicants: SOLAR JUNCTION CORPORATION [US/US]; 401 Charcot Avenue San Jose, CA 95131 (US)
Inventors: SUAREZ, Ferran; (US).
LIU, Ting; (US).
SUKIASYAN, Arsen; (US)
Agent: LAMBERT, William, R.; (US)
Priority Data:
62/377,239 19.08.2016 US
Title (EN) DILUTE NITRIDE DEVICES WITH ACTIVE GROUP IV SUBSTRATE AND CONTROLLED DOPANT DIFFUSION AT THE NUCLEATION LAYER-SUBSTRATE INTERFACE
(FR) DISPOSITIFS AU NITRURE DILUÉ AVEC SUBSTRAT DE GROUPE IV ACTIF ET DIFFUSION DE DOPANT CONTRÔLÉE AU NIVEAU DE L'INTERFACE COUCHE DE NUCLÉATION-SUBSTRAT
Abstract: front page image
(EN)Semiconductor devices having an antimony -containing nucleation layer between a dilute nitride material and an underlying substrate are disclosed. Dilute nitride-containing multijunction solar cells incorporating (Al)InGaPSb/Bi nucleation layers exhibit high efficiency.
(FR)L'invention concerne des dispositifs à semi-conducteur ayant une couche de nucléation contenant de l'antimoine entre un matériau de nitrure dilué et un substrat sous-jacent. Des cellules solaires multijonction contenant du nitrure dilué incorporant des couches de nucléation (Al)InGaPSb/Bi présentent une efficacité élevée.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)